Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

doi:10.1088/1674-1056/24/4/048503

›› 2015, Vol. 24 ›› Issue (4): 48503-048503.doi: 10.1088/1674-1056/24/4/048503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

周幸叶, 冯志红, 王元刚, 顾国栋, 宋旭波, 蔡树军

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

收稿日期:2014-09-09 修回日期:2014-11-05 出版日期:2015-04-05 发布日期:2015-04-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61306113).

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Zhou Xing-Ye (周幸叶), Feng Zhi-Hong (冯志红), Wang Yuan-Gang (王元刚), Gu Guo-Dong (顾国栋), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军)

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Received:2014-09-09 Revised:2014-11-05 Online:2015-04-05 Published:2015-04-05
Contact: Zhou Xing-Ye, Feng Zhi-Hong E-mail:xyzhoufly@163.com;ga917vv@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61306113).

摘要/Abstract

摘要： In this paper, two-dimensional (2D) transient simulations of an AlGaN/GaN high-electron-mobility transistor (HEMT) are carried out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage (I-V) curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of AlGaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.

关键词: transient simulation, AlGaN/GaN HEMT, current collapse, trapping effect

Abstract: In this paper, two-dimensional (2D) transient simulations of an AlGaN/GaN high-electron-mobility transistor (HEMT) are carried out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage (I-V) curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of AlGaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.

Key words: transient simulation, AlGaN/GaN HEMT, current collapse, trapping effect

中图分类号: (Field effect devices)

85.30.Tv

85.30.De (Semiconductor-device characterization, design, and modeling) 73.61.Ey (III-V semiconductors) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)

周幸叶, 冯志红, 王元刚, 顾国栋, 宋旭波, 蔡树军. Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor[J]. , 2015, 24(4): 48503-048503.

Zhou Xing-Ye (周幸叶), Feng Zhi-Hong (冯志红), Wang Yuan-Gang (王元刚), Gu Guo-Dong (顾国栋), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军). Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor[J]. Chin. Phys. B, 2015, 24(4): 48503-048503.

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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

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