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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method
林体元, 庞磊, 袁婷婷, 刘新宇
Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method
Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇)
Chin. Phys. B . 2014, (
12
): 127304 -127304 . DOI: 10.1088/1674-1056/23/12/127304