›› 2014, Vol. 23 ›› Issue (12): 127304-127304.doi: 10.1088/1674-1056/23/12/127304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
林体元, 庞磊, 袁婷婷, 刘新宇
Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇)
摘要: A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current (Ids) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of Vgs= -3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.
中图分类号: (III-V semiconductors)