中国物理B ›› 2017, Vol. 26 ›› Issue (9): 98504-098504.doi: 10.1088/1674-1056/26/9/098504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs

Jianfei Li(李建飞), Yuanjie Lv(吕元杰), Changfu Li(李长富), Ziwu Ji(冀子武), Zhiyong Pang(庞智勇), Xiangang Xu(徐现刚), Mingsheng Xu(徐明升)   

  1. 1 School of Microelectronics, Shandong University, Jinan 250100, China;
    2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    3 Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China;
    4 School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
  • 收稿日期:2016-12-02 修回日期:2017-05-06 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Ziwu Ji E-mail:jiziwu@sdu.edu.cn
  • 基金资助:
    Project supported by the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), the National Natural Science Foundation of China (Grant No. 51672163), and the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401).

Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs

Jianfei Li(李建飞)1,2, Yuanjie Lv(吕元杰)2, Changfu Li(李长富)1, Ziwu Ji(冀子武)1, Zhiyong Pang(庞智勇)1, Xiangang Xu(徐现刚)3, Mingsheng Xu(徐明升)4   

  1. 1 School of Microelectronics, Shandong University, Jinan 250100, China;
    2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    3 Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China;
    4 School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
  • Received:2016-12-02 Revised:2017-05-06 Online:2017-09-05 Published:2017-09-05
  • Contact: Ziwu Ji E-mail:jiziwu@sdu.edu.cn
  • Supported by:
    Project supported by the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), the National Natural Science Foundation of China (Grant No. 51672163), and the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401).

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摘要： The photoluminescence (PL) and electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations, the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an FeGa3+/2+ acceptor level. This results in a decrease in the yellow luminescence (YL) emission intensity accompanied by the appearance of an infrared (IR) emission, and a decrease in the off-state buffer leakage current (BLC). However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.

关键词: AlGaN/GaN HEMT, Fe-doping, photoluminescence, leakage current

Abstract: The photoluminescence (PL) and electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations, the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an FeGa3+/2+ acceptor level. This results in a decrease in the yellow luminescence (YL) emission intensity accompanied by the appearance of an infrared (IR) emission, and a decrease in the off-state buffer leakage current (BLC). However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.

Key words: AlGaN/GaN HEMT, Fe-doping, photoluminescence, leakage current

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 78.55.-m (Photoluminescence, properties and materials) 73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)