An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

doi:10.1088/1674-1056/23/12/128501

›› 2014, Vol. 23 ›› Issue (12): 128501-128501.doi: 10.1088/1674-1056/23/12/128501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

胡夏融^a, 吕瑞^b

a School of Physics and Chemistry, Xihua University, Chengdu 610039, China;
b School of Mathematics and Computer Engineering, Xihua University, Chengdu 610039, China

收稿日期:2014-05-20 修回日期:2014-06-28 出版日期:2014-12-15 发布日期:2014-12-15
基金资助:
Project supported by the Scientific Research Fund of Education Department of Sichuan Province, China (Grant No. 14ZB0132) and the Key Project of Xihua University, China (Grant No. z1323318).

An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

Hu Xia-Rong (胡夏融)^a, Lü Rui (吕瑞)^b

a School of Physics and Chemistry, Xihua University, Chengdu 610039, China;
b School of Mathematics and Computer Engineering, Xihua University, Chengdu 610039, China

Received:2014-05-20 Revised:2014-06-28 Online:2014-12-15 Published:2014-12-15
Contact: Hu Xia-Rong E-mail:h1_x2_r3@126.com
Supported by:
Project supported by the Scientific Research Fund of Education Department of Sichuan Province, China (Grant No. 14ZB0132) and the Key Project of Xihua University, China (Grant No. z1323318).

摘要/Abstract

摘要： In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field (REBULF) lateral double-diffused metal–oxide-semiconductor (LDMOS) transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail. The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field (RESURF) LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate.

关键词: REBULF, LDMOS, vertical electric field, breakdown voltage

Abstract: In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field (REBULF) lateral double-diffused metal–oxide-semiconductor (LDMOS) transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail. The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field (RESURF) LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate.

Key words: REBULF, LDMOS, vertical electric field, breakdown voltage

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Tv (Field effect devices)

胡夏融, 吕瑞. An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS[J]. , 2014, 23(12): 128501-128501.

Hu Xia-Rong (胡夏融), Lü Rui (吕瑞). An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS[J]. Chin. Phys. B, 2014, 23(12): 128501-128501.

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An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

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