Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

doi:10.1088/1674-1056/23/9/090702

›› 2014, Vol. 23 ›› Issue (9): 90702-090702.doi: 10.1088/1674-1056/23/9/090702

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

彭超^a, 胡志远^a, 宁冰旭^a, 黄辉祥^a, 樊双^a, 张正选^a, 毕大炜^a, 恩云飞^b

a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610, China

收稿日期:2014-03-11 修回日期:2014-03-25 出版日期:2014-09-15 发布日期:2014-09-15
基金资助:
Project supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201205) and the National Natural Science Foundation of China (Grant No. 61106103).

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

Peng Chao (彭超)^a, Hu Zhi-Yuan (胡志远)^a, Ning Bing-Xu (宁冰旭)^a, Huang Hui-Xiang (黄辉祥)^a, Fan Shuang (樊双)^a, Zhang Zheng-Xuan (张正选)^a, Bi Da-Wei (毕大炜)^a, En Yun-Fei (恩云飞)^b

a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610, China

Received:2014-03-11 Revised:2014-03-25 Online:2014-09-15 Published:2014-09-15
Contact: Zhang Zheng-Xuan E-mail:zxzhang@mail.sim.ac.cn
Supported by:
Project supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201205) and the National Natural Science Foundation of China (Grant No. 61106103).

摘要/Abstract

摘要： We investigate the effects of ⁶⁰Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator (PDSOI) input/output (I/O) n-MOSFETs. A shallow trench isolation (STI) parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose (TID) responses in the STI oxide. A radiation enhanced drain induced barrier lower (DIBL) effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.

关键词: partially depleted silicon-on-isolator n-MOSFET, sidewall implant, shallow trench isolation, total ionizing dose

Abstract: We investigate the effects of ⁶⁰Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator (PDSOI) input/output (I/O) n-MOSFETs. A shallow trench isolation (STI) parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose (TID) responses in the STI oxide. A radiation enhanced drain induced barrier lower (DIBL) effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.

Key words: partially depleted silicon-on-isolator n-MOSFET, sidewall implant, shallow trench isolation, total ionizing dose

中图分类号: (Environmental effects on instruments (e.g., radiation and pollution effects))

07.89.+b

42.88.+h (Environmental and radiation effects on optical elements, devices, and systems) 85.30.-z (Semiconductor devices)

彭超, 胡志远, 宁冰旭, 黄辉祥, 樊双, 张正选, 毕大炜, 恩云飞. Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs[J]. , 2014, 23(9): 90702-090702.

Peng Chao (彭超), Hu Zhi-Yuan (胡志远), Ning Bing-Xu (宁冰旭), Huang Hui-Xiang (黄辉祥), Fan Shuang (樊双), Zhang Zheng-Xuan (张正选), Bi Da-Wei (毕大炜), En Yun-Fei (恩云飞). Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs[J]. Chin. Phys. B, 2014, 23(9): 90702-090702.

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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

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