Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs
彭超, 胡志远, 宁冰旭, 黄辉祥, 樊双, 张正选, 毕大炜, 恩云飞
Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs
Peng Chao (彭超), Hu Zhi-Yuan (胡志远), Ning Bing-Xu (宁冰旭), Huang Hui-Xiang (黄辉祥), Fan Shuang (樊双), Zhang Zheng-Xuan (张正选), Bi Da-Wei (毕大炜), En Yun-Fei (恩云飞)
Chin. Phys. B
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2014, (9): 90702
-090702
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DOI: 10.1088/1674-1056/23/9/090702