›› 2014, Vol. 23 ›› Issue (9): 97308-097308.doi: 10.1088/1674-1056/23/9/097308

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

蒋超, 陆海, 陈敦军, 任芳芳, 张荣, 郑有炓   

  1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • 收稿日期:2014-01-20 修回日期:2014-03-26 出版日期:2014-09-15 发布日期:2014-09-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2010CB327504, 2011CB922100, and 2011CB301900), the National Natural Science Foundation of China (Grant Nos. 60936004 and 11104130), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011556 and BK2011050), and the Priority Academic Development Program of Jiangsu Higher Education Institutions, China.

Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓)   

  1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • Received:2014-01-20 Revised:2014-03-26 Online:2014-09-15 Published:2014-09-15
  • Contact: Lu Hai E-mail:hailu@nju.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2010CB327504, 2011CB922100, and 2011CB301900), the National Natural Science Foundation of China (Grant Nos. 60936004 and 11104130), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011556 and BK2011050), and the Priority Academic Development Program of Jiangsu Higher Education Institutions, China.

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摘要： In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes (SBDs) fabricated on the silicon substrate are investigated. The breakdown voltage (BV) of the SBDs first increases as a function of the anode-to-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm2.

关键词: AlGaN/GaN, Schottky barrier diodes, silicon substrate, breakdown

Abstract: In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes (SBDs) fabricated on the silicon substrate are investigated. The breakdown voltage (BV) of the SBDs first increases as a function of the anode-to-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm2.

Key words: AlGaN/GaN, Schottky barrier diodes, silicon substrate, breakdown

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 85.30.Kk (Junction diodes)