›› 2014, Vol. 23 ›› Issue (9): 97308-097308.doi: 10.1088/1674-1056/23/9/097308
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
蒋超, 陆海, 陈敦军, 任芳芳, 张荣, 郑有炓
Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓)
摘要: In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes (SBDs) fabricated on the silicon substrate are investigated. The breakdown voltage (BV) of the SBDs first increases as a function of the anode-to-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm2.
中图分类号: (III-V semiconductors)