Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
蒋超, 陆海, 陈敦军, 任芳芳, 张荣, 郑有炓
Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓)
Chin. Phys. B
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2014, (9): 97308
-097308
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DOI: 10.1088/1674-1056/23/9/097308