Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

doi:10.1088/1674-1056/23/8/088505

›› 2014, Vol. 23 ›› Issue (8): 88505-088505.doi: 10.1088/1674-1056/23/8/088505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

毕津顺, 曾传滨, 高林春, 刘刚, 罗家俊, 韩郑生

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2013-11-26 修回日期:2014-02-21 出版日期:2014-08-15 发布日期:2014-08-15

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

Bi Jin-Shun (毕津顺), Zeng Chuan-Bin (曾传滨), Gao Lin-Chun (高林春), Liu Gang (刘刚), Luo Jia-Jun (罗家俊), Han Zheng-Sheng (韩郑生)

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2013-11-26 Revised:2014-02-21 Online:2014-08-15 Published:2014-08-15
Contact: Bi Jin-Shun E-mail:bijinshun@ime.ac.cn

摘要/Abstract

摘要： In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-μm single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and analyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test (DUT). The dependences of SET characteristics on drain-induced barrier lowering (DIBL) and the parasitic bipolar junction transistor (PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.

关键词: laser test, single event transient, charge collection, partially depleted silicon on insulator

Abstract: In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-μm single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and analyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test (DUT). The dependences of SET characteristics on drain-induced barrier lowering (DIBL) and the parasitic bipolar junction transistor (PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.

Key words: laser test, single event transient, charge collection, partially depleted silicon on insulator

中图分类号: (Field effect devices)

85.30.Tv

61.80.Ed (γ-ray effects) 94.05.Dd (Radiation processes)

毕津顺, 曾传滨, 高林春, 刘刚, 罗家俊, 韩郑生. Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET[J]. , 2014, 23(8): 88505-088505.

Bi Jin-Shun (毕津顺), Zeng Chuan-Bin (曾传滨), Gao Lin-Chun (高林春), Liu Gang (刘刚), Luo Jia-Jun (罗家俊), Han Zheng-Sheng (韩郑生). Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET[J]. Chin. Phys. B, 2014, 23(8): 88505-088505.

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Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

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