Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

doi:10.1088/1674-1056/24/11/119401

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 119401-119401.doi: 10.1088/1674-1056/24/11/119401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇

Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

于俊庭^a, 陈书明^{a b}, 陈建军^a, 黄鹏程^a

a College of Computer, National University of Defense Technology, Changsha 410073, China;
b National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China

收稿日期:2015-03-09 修回日期:2015-06-23 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Yu Jun-Ting E-mail:yjting_nudt@163.com
基金资助:
Project supported by the National Natural Science of China (Grant No. 61376109).

Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

Yu Jun-Ting (于俊庭)^a, Chen Shu-Ming (陈书明)^{a b}, Chen Jian-Jun (陈建军)^a, Huang Peng-Cheng (黄鹏程)^a

a College of Computer, National University of Defense Technology, Changsha 410073, China;
b National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China

Received:2015-03-09 Revised:2015-06-23 Online:2015-11-05 Published:2015-11-05
Contact: Yu Jun-Ting E-mail:yjting_nudt@163.com
Supported by:
Project supported by the National Natural Science of China (Grant No. 61376109).

摘要/Abstract

摘要： FinFET technologies are becoming the mainstream process as technology scales down. Based on a 28-nm bulk p-FinFET device, we have investigated the fin width and height dependence of bipolar amplification for heavy-ion-irradiated FinFETs by 3D TCAD numerical simulation. Simulation results show that due to a well bipolar conduction mechanism rather than a channel (fin) conduction path, the transistors with narrower fins exhibit a diminished bipolar amplification effect, while the fin height presents a trivial effect on the bipolar amplification and charge collection. The results also indicate that the single event transient (SET) pulse width can be mitigated about 35% at least by optimizing the ratio of fin width and height, which can provide guidance for radiation-hardened applications in bulk FinFET technology.

关键词: fin width and height, bipolar amplification, single event transient, bulk FinFET

Abstract: FinFET technologies are becoming the mainstream process as technology scales down. Based on a 28-nm bulk p-FinFET device, we have investigated the fin width and height dependence of bipolar amplification for heavy-ion-irradiated FinFETs by 3D TCAD numerical simulation. Simulation results show that due to a well bipolar conduction mechanism rather than a channel (fin) conduction path, the transistors with narrower fins exhibit a diminished bipolar amplification effect, while the fin height presents a trivial effect on the bipolar amplification and charge collection. The results also indicate that the single event transient (SET) pulse width can be mitigated about 35% at least by optimizing the ratio of fin width and height, which can provide guidance for radiation-hardened applications in bulk FinFET technology.

Key words: fin width and height, bipolar amplification, single event transient, bulk FinFET

中图分类号: (Radiation processes)

94.05.Dd

85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

于俊庭, 陈书明, 陈建军, 黄鹏程. Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation[J]. 中国物理B, 2015, 24(11): 119401-119401.

Yu Jun-Ting (于俊庭), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Huang Peng-Cheng (黄鹏程). Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation[J]. Chin. Phys. B, 2015, 24(11): 119401-119401.

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Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

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