Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET
毕津顺, 曾传滨, 高林春, 刘刚, 罗家俊, 韩郑生
Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET
Bi Jin-Shun (毕津顺), Zeng Chuan-Bin (曾传滨), Gao Lin-Chun (高林春), Liu Gang (刘刚), Luo Jia-Jun (罗家俊), Han Zheng-Sheng (韩郑生)
Chin. Phys. B
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2014, (8): 88505
-088505
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DOI: 10.1088/1674-1056/23/8/088505