中国物理B ›› 2011, Vol. 20 ›› Issue (12): 129401-129401.doi: 10.1088/1674-1056/20/12/129401
• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇
秦军瑞, 陈书明, 刘必慰, 刘征, 梁斌, 杜延康
Qin Jun-Rui(秦军瑞)†, Chen Shu-Ming(陈书明), Liu Bi-Wei(刘必慰), Liu Zheng(刘征), Liang Bin(梁斌), and Du Yan-Kang(杜延康)
摘要: Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.
中图分类号: (Radiation processes)