A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

doi:10.1088/1674-1056/22/5/056103

中国物理B ›› 2013, Vol. 22 ›› Issue (5): 56103-056103.doi: 10.1088/1674-1056/22/5/056103

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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

孙亚宾^{a b}, 付军^{a b}, 许军^{a b}, 王玉东^{a b}, 周卫^{a b}, 张伟^a, 崔杰^a, 李高庆^a, 刘志弘^{a b}, 余永涛^c, 马英起^c, 封国强^c, 韩建伟^c

a Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
b Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China;
c National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2012-11-27 修回日期:2013-01-07 出版日期:2013-04-01 发布日期:2013-04-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60976013).

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

Sun Ya-Bin (孙亚宾)^{a b}, Fu Jun (付军)^{a b}, Xu Jun (许军)^{a b}, Wang Yu-Dong (王玉东)^{a b}, Zhou Wei (周卫)^{a b}, Zhang Wei (张伟)^a, Cui Jie (崔杰)^a, Li Gao-Qing (李高庆)^a, Liu Zhi-Hong (刘志弘)^{a b}, Yu Yong-Tao (余永涛)^c, Ma Ying-Qi (马英起)^c, Feng Guo-Qiang (封国强)^c, Han Jian-Wei (韩建伟)^c

a Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
b Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China;
c National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China

Received:2012-11-27 Revised:2013-01-07 Online:2013-04-01 Published:2013-04-01
Contact: Sun Ya-Bin E-mail:sunyb10@mails.tsinghua.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60976013).

摘要/Abstract

摘要： A study on single event transient (SET) induced by pulsed laser in silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

关键词: single event transient (SET), pulsed laser, charge collection, load resistance, SiGe heterojunction bipolar transistor (HBT)

Abstract: A study on single event transient (SET) induced by pulsed laser in silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

Key words: single event transient (SET), pulsed laser, charge collection, load resistance, SiGe heterojunction bipolar transistor (HBT)

中图分类号: (Ultraviolet, visible, and infrared radiation effects (including laser radiation))

61.80.Ba

孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘, 余永涛, 马英起, 封国强, 韩建伟. A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor[J]. 中国物理B, 2013, 22(5): 56103-056103.

Sun Ya-Bin (孙亚宾), Fu Jun (付军), Xu Jun (许军), Wang Yu-Dong (王玉东), Zhou Wei (周卫), Zhang Wei (张伟), Cui Jie (崔杰), Li Gao-Qing (李高庆), Liu Zhi-Hong (刘志弘), Yu Yong-Tao (余永涛), Ma Ying-Qi (马英起), Feng Guo-Qiang (封国强), Han Jian-Wei (韩建伟). A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor[J]. Chin. Phys. B, 2013, 22(5): 56103-056103.

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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

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