中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/23/5/057304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
张月a b, 卓青青a b, 刘红侠a b, 马晓华b c, 郝跃b
Zhang Yue (张月)a b, Zhuo Qing-Qing (卓青青)a b, Liu Hong-Xia (刘红侠)a b, Ma Xiao-Hua (马晓华)b c, Hao Yue (郝跃)b
摘要: The effect of the static negative bias temperature (NBT) stress on a p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability (NBTI) degradation has the trend predicted by the reaction-diffusion (R-D) model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.
中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))