中国物理B ›› 2007, Vol. 16 ›› Issue (7): 2111-2115.doi: 10.1088/1009-1963/16/7/052

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Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)

刘红侠, 郝跃   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2006-10-25 修回日期:2007-01-18 出版日期:2007-07-20 发布日期:2007-07-04
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60206006), the Program for New Century Excellent Talents of Ministry of Education of China (Grant No 681231366), the National Defense Pre-Research Foundation of China (Grant N

Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)

Liu Hong-Xia (刘红侠)† and Hao Yue (郝跃)   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2006-10-25 Revised:2007-01-18 Online:2007-07-20 Published:2007-07-04
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60206006), the Program for New Century Excellent Talents of Ministry of Education of China (Grant No 681231366), the National Defense Pre-Research Foundation of China (Grant N

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摘要： Hot carrier injection (HCI) at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability (NBTI) and hot carriers. Hot-carrier-stress-induced damage at Vg=Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different: the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs). We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.

关键词: ultra-deep submicron PMOSFETs, negative bias temperature instability (NBTI), hot carrier injection (HCI), positive fixed oxide charges

Abstract: Hot carrier injection (HCI) at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability (NBTI) and hot carriers. Hot-carrier-stress-induced damage at Vg=Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different: the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs). We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.

Key words: ultra-deep submicron PMOSFETs, negative bias temperature instability (NBTI), hot carrier injection (HCI), positive fixed oxide charges

中图分类号:  (Field effect devices)

  • 85.30.Tv