Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

doi:10.1088/1674-1056/23/5/057304

中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/23/5/057304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

张月^{a b}, 卓青青^{a b}, 刘红侠^{a b}, 马晓华^{b c}, 郝跃^b

a School of Microelectronics, Xidian University, Xi'an 710071, China;
b State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China;
c School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2013-08-20 修回日期:2013-11-26 出版日期:2014-05-15 发布日期:2014-05-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106).

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

Zhang Yue (张月)^{a b}, Zhuo Qing-Qing (卓青青)^{a b}, Liu Hong-Xia (刘红侠)^{a b}, Ma Xiao-Hua (马晓华)^{b c}, Hao Yue (郝跃)^b

a School of Microelectronics, Xidian University, Xi'an 710071, China;
b State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China;
c School of Technical Physics, Xidian University, Xi'an 710071, China

Received:2013-08-20 Revised:2013-11-26 Online:2014-05-15 Published:2014-05-15
Contact: Zhang Yue E-mail:zhangy@mail.xidian.edu.cn
About author:73.40.Qv; 85.30.De
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106).

摘要/Abstract

摘要： The effect of the static negative bias temperature (NBT) stress on a p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability (NBTI) degradation has the trend predicted by the reaction-diffusion (R-D) model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.

关键词: negative bias temperature instability (NBTI), reaction-diffusion model, interface traps, power MOSFET

Abstract: The effect of the static negative bias temperature (NBT) stress on a p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability (NBTI) degradation has the trend predicted by the reaction-diffusion (R-D) model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.

Key words: negative bias temperature instability (NBTI), reaction-diffusion model, interface traps, power MOSFET

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.De (Semiconductor-device characterization, design, and modeling)

张月, 卓青青, 刘红侠, 马晓华, 郝跃. Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET[J]. 中国物理B, 2014, 23(5): 57304-057304.

Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET[J]. Chin. Phys. B, 2014, 23(5): 57304-057304.

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Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

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