Recovery of PMOSFET NBTI under different conditions

doi:10.1088/1674-1056/24/9/097304

中国物理B ›› 2015, Vol. 24 ›› Issue (9): 97304-097304.doi: 10.1088/1674-1056/24/9/097304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Recovery of PMOSFET NBTI under different conditions

曹艳荣^{a b}, 杨毅^a, 曹成^a, 何文龙^a, 郑雪峰^b, 马晓华^c, 郝跃^b

a School of Mechano-electric Engineering, Xidian University, Xi'an 710071, China;
b Key Laboratory of Wide Band-gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
c School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2014-07-09 修回日期:2015-04-01 出版日期:2015-09-05 发布日期:2015-09-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant Nos. 61404097, 61334002, 61106106, and 61176130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140415).

Recovery of PMOSFET NBTI under different conditions

Cao Yan-Rong (曹艳荣)^{a b}, Yang Yi (杨毅)^a, Cao Cheng (曹成)^a, He Wen-Long (何文龙)^a, Zheng Xue-Feng (郑雪峰)^b, Ma Xiao-Hua (马晓华)^c, Hao Yue (郝跃)^b

a School of Mechano-electric Engineering, Xidian University, Xi'an 710071, China;
b Key Laboratory of Wide Band-gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
c School of Technical Physics, Xidian University, Xi'an 710071, China

Received:2014-07-09 Revised:2015-04-01 Online:2015-09-05 Published:2015-09-05
Contact: Cao Yan-Rong E-mail:yrcao@mail.xidian.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant Nos. 61404097, 61334002, 61106106, and 61176130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140415).

摘要/Abstract

摘要： Negative bias temperature instability (NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal-oxide-semiconductor field effect transistor (PMOSFET), explain the various recovery phenomena, and find the possible processes of the recovery.

关键词: negative bias temperature instability (NBTI), P-type metal-oxide-semiconductor field effect transistor, recovery

Abstract: Negative bias temperature instability (NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal-oxide-semiconductor field effect transistor (PMOSFET), explain the various recovery phenomena, and find the possible processes of the recovery.

Key words: negative bias temperature instability (NBTI), P-type metal-oxide-semiconductor field effect transistor, recovery

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.Tv (Field effect devices)

曹艳荣, 杨毅, 曹成, 何文龙, 郑雪峰, 马晓华, 郝跃. Recovery of PMOSFET NBTI under different conditions[J]. 中国物理B, 2015, 24(9): 97304-097304.

Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Recovery of PMOSFET NBTI under different conditions[J]. Chin. Phys. B, 2015, 24(9): 97304-097304.

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Recovery of PMOSFET NBTI under different conditions

Recovery of PMOSFET NBTI under different conditions

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