Effect of additional silicon on titanium/4H-SiC contacts properties

doi:10.1088/1674-1056/23/5/057303

中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57303-057303.doi: 10.1088/1674-1056/23/5/057303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of additional silicon on titanium/4H-SiC contacts properties

张永平, 陈之战, 卢吴越, 谈嘉慧, 程越, 石旺舟

Shanghai Normal University, Shanghai 200234, China

收稿日期:2013-10-09 修回日期:2013-12-23 出版日期:2014-05-15 发布日期:2014-05-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2012CB326402), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).

Effect of additional silicon on titanium/4H-SiC contacts properties

Zhang Yong-Ping (张永平), Chen Zhi-Zhan (陈之战), Lu Wu-Yue (卢吴越), Tan Jia-Hui (谈嘉慧), Cheng Yue (程越), Shi Wang-Zhou (石旺舟)

Shanghai Normal University, Shanghai 200234, China

Received:2013-10-09 Revised:2013-12-23 Online:2014-05-15 Published:2014-05-15
Contact: Chen Zhi-Zhan E-mail:chenwbgs@126.com
About author:73.40.Cg; 68.55.-a
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2012CB326402), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).

摘要/Abstract

摘要： The Ti electrode was deposited on the (0001 ) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.

关键词: Ti/4H-SiC, ohmic contact, surface morphology, additional silicon

Abstract: The Ti electrode was deposited on the (0001 ) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.

Key words: Ti/4H-SiC, ohmic contact, surface morphology, additional silicon

中图分类号: (Contact resistance, contact potential)

73.40.Cg

68.55.-a (Thin film structure and morphology)

张永平, 陈之战, 卢吴越, 谈嘉慧, 程越, 石旺舟. Effect of additional silicon on titanium/4H-SiC contacts properties[J]. 中国物理B, 2014, 23(5): 57303-057303.

Zhang Yong-Ping (张永平), Chen Zhi-Zhan (陈之战), Lu Wu-Yue (卢吴越), Tan Jia-Hui (谈嘉慧), Cheng Yue (程越), Shi Wang-Zhou (石旺舟). Effect of additional silicon on titanium/4H-SiC contacts properties[J]. Chin. Phys. B, 2014, 23(5): 57303-057303.

参考文献 33

[1]	Vix-Guterl C, Alix I, Gibot P and Ehrburger P 2003 Appl. Surf. Sci. 329 1639
[2]	Katsuno T, Watanabe Y, Fujiwara H, Konishi M, Naruoka H, Morimoto J, Morino T and Endo T 2011 Appl. Phys. Lett. 98 222111
[3]	Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
[4]	Guo H, Zhang Y M, Qiao D Y, Sun L and Zhang Y M 2007 Chin. Phys. 16 1753
[5]	Yang H, Peng T H, Wang W J, Zhang D F and Chen X L 2007 Appl. Surf. Sci. 254 527
[6]	Yang H, Peng T H, Wang W J, Wang W Y and Chen X L 2008 Appl. Surf. Sci. 255 3121
[7]	Goesmann F and Schmid-Fetzer R 1995 Semicond. Technol. 10 1652
[8]	Goesmann F and Schmid-Fetzer R 1997 Mater. Sci. Eng. B 46 357
[9]	Guo H, Zhang Y M and Zhang Y M 2006 Chin. Phys. 15 2142
[10]	Xu M S, Hua X B, Peng Y, Yang K, Xia W, Yu G J and Xu X G 2013 J. Alloys Compd. 550 46
[11]	Buchholt K, Ghandi R, Domeij M, Zetterling C M, Lu J, Eklund P, Hultman L and Spetz A L 2011 Appl. Phys. Lett. 98 042108
[12]	Wang Z, Tsukimoto S, Saito M, Ito K, Murakami M and Ikuhara Y 2009 Phys. Rev. B 80 245303
[13]	Drevin-Bazin A, Barbot J F, Alkazaz M, Cabioch T and Beaufort M F 2012 Appl. Phys. Lett. 101 021606
[14]	Stoltz S E, Starnberg H I and Barsoum M W 2003 J. Phys. Chem. Solids. 64 2321
[15]	Mohney S E, Hull B A, Lin J Y and Crofton J 2002 Solid State Electron. 46 689
[16]	Via F L, Roccaforte F, Makhtari A, Raineri V, Musumeci P and Calcagno L 2002 Microelectronic Engineering 60 269
[17]	Reeves G K and Harrison H B 1982 IEEE Electron Device 3 111
[18]	Lee S H, Park H and Paine D C 2011 J. Appl. Phys. 109 063702
[19]	Tsukimoto S, Nitta K, Sakai T, Moriyama M and Murakami M 2004 J. Electron Mater. 33 460
[20]	Frazzetto A, Giannazzo F, Nigro R L, Raineri V and Roccaforte F 2011 J. Phys. D: Appl. Phys. 44 255302
[21]	Alami J, Eklund P, Emmerlich J, Wilhelmsson O, Jansson U, Högberg H, Hultman L and Helmersson U 2006 Thin Solid Films 515 1731
[22]	Johansson L I and Virojanadara C 2011 Phys. Status Solidi B 3 667
[23]	Waldrop J R and Grant R W 1993 Appl. Phys. Lett. 62 2685
[24]	Kooi B J, Kabel M, Kloosterman A B and Hosson J T M D 1999 Acta Mater. 47 3105
[25]	Tong Q Y, Gutjahr K, Hopfe S, GOsele U and Lee T H 1997 Appl. Phys. Lett. 70 1390
[26]	Kim D W and Baik H K 2000 Appl. Phys. Lett. 77 1011
[27]	Michaelson H B 1997 J. Appl. Phys. 48 4729
[28]	Luo B, Ren F, Fitch R C, Gillespie J K, Jenkins T, Sewell J, Via D, Crespo A, Baca A G, Briggs R D, Gotthold D, Birkhahn R, Peres B and Pearton S J 2003 Appl. Phys. Lett. 82 3910
[29]	Radhakrishnan G, Adams P M and Speckman D M 2000 Thin Solid Films 358 131
[30]	Lan Y L, Lin H C, Liu H H, Lee G Y, Ren F, Pearton S J, Chang M N and Chyi J I 2009 Appl. Phys. Lett. 94 243502
[31]	Aboelfotoh M O and Tu K N 1986 Phys. Rev. B 34 2311
[32]	Teraji T, Hara S, Okushi H and Kajimura K 1997 Appl. Phys. Lett. 71 689
[33]	Pécz B, Tóth L, di Forte-Poisson M A and Vacas J 2003 Appl. Surf. Sci. 206 8

Effect of additional silicon on titanium/4H-SiC contacts properties

Effect of additional silicon on titanium/4H-SiC contacts properties

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 33

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.
[2]	Mei Qiao(乔梅), Tie-Jun Wang(王铁军), Yong Liu(刘泳), Tao Liu(刘涛), Shan Liu(刘珊), and Shi-Cai Xu(许士才). Surface structure modification of ReSe₂ nanosheets via carbon ion irradiation[J]. 中国物理B, 2023, 32(2): 26101-026101.
[3]	Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东). Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains[J]. 中国物理B, 2021, 30(9): 96803-096803.
[4]	Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302.
[5]	Hadi Savaloni, Rezvan Karami, Helma Sadat Bahari, Fateme Abdi. Influence of N⁺ implantation on structure, morphology, and corrosion behavior of Al in NaCl solution[J]. 中国物理B, 2020, 29(5): 58102-058102.
[6]	常爱玲, 毛亦琛, 黄志伟, 洪海洋, 徐剑芳, 黄巍, 陈松岩, 李成. Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films[J]. 中国物理B, 2020, 29(3): 38102-038102.
[7]	侯明辰, 谢刚, 盛况. Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing[J]. 中国物理B, 2019, 28(3): 37302-037302.
[8]	王磊, 张家琦, 李柳暗, 前田裕太郎, 敖金平. Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2017, 26(3): 37201-037201.
[9]	张蕾, 郝长春, 冯盈, 高峰, 逯晓龙, 李俊花, 孙润广. Analysis of the induction of the myelin basic protein binding to the plasma membrane phospholipid monolayer[J]. 中国物理B, 2016, 25(9): 90507-090507.
[10]	李晓静, 赵德刚, 江德生, 陈平, 朱建军, 刘宗顺, 乐伶聪, 杨静, 何晓光, 张立群, 刘建平, 张书明, 杨辉. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN[J]. 中国物理B, 2015, 24(9): 96804-096804.
[11]	Alireza Samavati, Z. Othaman, S. K. Ghoshal, M. K. Mustafa. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots[J]. , 2015, 24(2): 28103-028103.
[12]	周天宇, 刘学超, 黄维, 卓世异, 郑燕青, 施尔畏. Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC[J]. 中国物理B, 2015, 24(12): 126801-126801.
[13]	李晓静, 赵德刚, 江德生, 陈平, 朱建军, 刘宗顺, 乐伶聪, 杨静, 何晓光. Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer[J]. 中国物理B, 2015, 24(11): 116803-116803.
[14]	韩超, 张玉明, 宋庆文, 汤晓燕, 张义门, 郭辉, 王悦湖. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface[J]. 中国物理B, 2015, 24(11): 117304-117304.
[15]	程越, 赵高杰, 刘益宏, 孙玉俊, 王涛, 陈之战. Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts[J]. 中国物理B, 2015, 24(10): 107303-107303.