Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

doi:10.1088/1674-1056/ab6c4a

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 38102-038102.doi: 10.1088/1674-1056/ab6c4a

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films

Ailing Chang(常爱玲), Yichen Mao(毛亦琛), Zhiwei Huang(黄志伟), Haiyang Hong(洪海洋), Jianfang Xu(徐剑芳), Wei Huang(黄巍), Songyan Chen(陈松岩), Cheng Li(李成)

1 Department of Physics, OSED, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
2 Xiamen University Tan Kah Kee College, Zhangzhou 363105, China

收稿日期:2019-12-10 修回日期:2020-01-09 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Cheng Li E-mail:lich@xmu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films

Ailing Chang(常爱玲)¹, Yichen Mao(毛亦琛)¹, Zhiwei Huang(黄志伟)², Haiyang Hong(洪海洋)¹, Jianfang Xu(徐剑芳)¹, Wei Huang(黄巍)¹, Songyan Chen(陈松岩)¹, Cheng Li(李成)¹

1 Department of Physics, OSED, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
2 Xiamen University Tan Kah Kee College, Zhangzhou 363105, China

Received:2019-12-10 Revised:2020-01-09 Online:2020-03-05 Published:2020-03-05
Contact: Cheng Li E-mail:lich@xmu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).

摘要/Abstract

摘要： Hafnium disulfide (HfS₂) is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors in the framework of CMOS-compatible technology is necessary. We reported on the deposition of HfS₂ nanocrystals by remote plasma enhanced atomic layer deposition at low temperature using Hf(N(CH₃)(C₂H₅))₄ and H₂S as the reaction precursors. Self-limiting reaction behavior was observed at the deposition temperatures ranging from 150℃ to 350℃, and the film thickness increased linearly with the growth cycles. The uniform HfS₂ nanocrystal thin films were obtained with the size of nanocrystal grain up to 27 nm. It was demonstrated that higher deposition temperature could enlarge the grain size and improve the HfS₂ crystallinity, while causing crystallization of the mixed HfO₂ above 450℃. These results suggested that atomic layer deposition is a low-temperature route to synthesize high quality HfS₂ nanocrystals for electronic device or electrochemical applications.

关键词: HfS₂, atomic layer deposition, surface morphology

Abstract: Hafnium disulfide (HfS₂) is a promising two-dimensional material for scaling electronic devices due to its higher carrier mobility, in which the combination of two-dimensional materials with traditional semiconductors in the framework of CMOS-compatible technology is necessary. We reported on the deposition of HfS₂ nanocrystals by remote plasma enhanced atomic layer deposition at low temperature using Hf(N(CH₃)(C₂H₅))₄ and H₂S as the reaction precursors. Self-limiting reaction behavior was observed at the deposition temperatures ranging from 150℃ to 350℃, and the film thickness increased linearly with the growth cycles. The uniform HfS₂ nanocrystal thin films were obtained with the size of nanocrystal grain up to 27 nm. It was demonstrated that higher deposition temperature could enlarge the grain size and improve the HfS₂ crystallinity, while causing crystallization of the mixed HfO₂ above 450℃. These results suggested that atomic layer deposition is a low-temperature route to synthesize high quality HfS₂ nanocrystals for electronic device or electrochemical applications.

Key words: HfS₂, atomic layer deposition, surface morphology

中图分类号: (Nanocrystalline materials)

81.07.Bc

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

常爱玲, 毛亦琛, 黄志伟, 洪海洋, 徐剑芳, 黄巍, 陈松岩, 李成. Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films[J]. 中国物理B, 2020, 29(3): 38102-038102.

Ailing Chang(常爱玲), Yichen Mao(毛亦琛), Zhiwei Huang(黄志伟), Haiyang Hong(洪海洋), Jianfang Xu(徐剑芳), Wei Huang(黄巍), Songyan Chen(陈松岩), Cheng Li(李成). Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films[J]. Chin. Phys. B, 2020, 29(3): 38102-038102.

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Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films

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