Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

doi:10.1088/1674-1056/23/4/046804

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 46804-046804.doi: 10.1088/1674-1056/23/4/046804

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge

韩乐^{a b}, 王盛凯^b, 张雄^a, 薛百清^b, 吴汪然^c, 赵毅^c, 刘洪刚^b

a Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
b Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
c School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

收稿日期:2013-08-03 修回日期:2013-10-23 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2011CBA00607), the National Natural Science Foundation of China (Grant No. 61204103), and the National Science & Technology MajorProject of China (Grant No. 2011ZX02708-003).

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge

Han Le (韩乐)^{a b}, Wang Sheng-Kai (王盛凯)^b, Zhang Xiong (张雄)^a, Xue Bai-Qing (薛百清)^b, Wu Wang-Ran (吴汪然)^c, Zhao Yi (赵毅)^c, Liu Hong-Gang (刘洪刚)^b

a Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
b Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
c School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Received:2013-08-03 Revised:2013-10-23 Online:2014-04-15 Published:2014-04-15
Contact: Wang Sheng-Kai, Liu Hong-Gang E-mail:wangshengkai@ime.ac.cn;liuhonggang@ime.ac.cn
About author:68.35.Ct; 73.40.Qv; 85.30.Tv
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2011CBA00607), the National Natural Science Foundation of China (Grant No. 61204103), and the National Science & Technology MajorProject of China (Grant No. 2011ZX02708-003).

摘要/Abstract

摘要： We propose a modified thermal oxidation method in which an Al₂O₃ capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO_x interfacial layer, and obtain a superior Al₂O₃/GeO_x/Ge gate stack. The GeO_x interfacial layer is formed in oxidation reaction by oxygen passing through the Al₂O₃ OBL, in which the Al₂O₃ layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO_x interfacial layer would dramatically decrease as the thickness of Al₂O₃ OBL increases, which is beneficial to achieving an ultrathin GeO_x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO_x interfacial layer has little influence on the passivation effect of the Al₂O₃/Ge interface. Ge (100) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) using the Al₂O₃/GeO_x/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I_on/I_off) ratio of above 1× 10⁴, a subthreshold slope of ～ 120 mV/dec, and a peak hole mobility of 265 cm²/V· s are achieved.

关键词: GeO_x interfacial layer, thermal oxidation, GeO desorption, Al₂O₃

Abstract: We propose a modified thermal oxidation method in which an Al₂O₃ capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO_x interfacial layer, and obtain a superior Al₂O₃/GeO_x/Ge gate stack. The GeO_x interfacial layer is formed in oxidation reaction by oxygen passing through the Al₂O₃ OBL, in which the Al₂O₃ layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO_x interfacial layer would dramatically decrease as the thickness of Al₂O₃ OBL increases, which is beneficial to achieving an ultrathin GeO_x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO_x interfacial layer has little influence on the passivation effect of the Al₂O₃/Ge interface. Ge (100) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) using the Al₂O₃/GeO_x/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I_on/I_off) ratio of above 1× 10⁴, a subthreshold slope of ～ 120 mV/dec, and a peak hole mobility of 265 cm²/V· s are achieved.

Key words: GeO_x interfacial layer, thermal oxidation, GeO desorption, Al₂O₃

中图分类号: (Interface structure and roughness)

68.35.Ct

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.Tv (Field effect devices)

韩乐, 王盛凯, 张雄, 薛百清, 吴汪然, 赵毅, 刘洪刚. Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge[J]. 中国物理B, 2014, 23(4): 46804-046804.

Han Le (韩乐), Wang Sheng-Kai (王盛凯), Zhang Xiong (张雄), Xue Bai-Qing (薛百清), Wu Wang-Ran (吴汪然), Zhao Yi (赵毅), Liu Hong-Gang (刘洪刚). Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge[J]. Chin. Phys. B, 2014, 23(4): 46804-046804.

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Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge

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