Synthesis and characterization of β-Ga2O3@GaN nanowires

doi:10.1088/1674-1056/28/2/028104

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 28104-028104.doi: 10.1088/1674-1056/28/2/028104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Synthesis and characterization of β-Ga₂O₃@GaN nanowires

Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

收稿日期:2018-11-12 修回日期:2018-12-09 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Xiang-Qian Xiu, Zi-Li Xie, Rong Zhang E-mail:xqxiu@nju.edu.cn;xzl@nju.edu.cn;rzhang@nju.edu.cn
基金资助:
Project supported by National Key Research and Development Program of China (Grant No. 2017YFB0404201), State Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018115), the Fund from the Solid-state Lighting & Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

Synthesis and characterization of β-Ga₂O₃@GaN nanowires

Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

Received:2018-11-12 Revised:2018-12-09 Online:2019-02-05 Published:2019-02-05
Contact: Xiang-Qian Xiu, Zi-Li Xie, Rong Zhang E-mail:xqxiu@nju.edu.cn;xzl@nju.edu.cn;rzhang@nju.edu.cn
Supported by:
Project supported by National Key Research and Development Program of China (Grant No. 2017YFB0404201), State Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018115), the Fund from the Solid-state Lighting & Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

摘要/Abstract

摘要：

In this work, we prepared the β-Ga₂O₃@GaN nanowires (NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to β-Ga₂O₃ was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.

关键词: β-Ga₂O₃@GaN, nanowires, thermal oxidation

Abstract:

Key words: β-Ga₂O₃@GaN, nanowires, thermal oxidation

中图分类号: (Methods of micro- and nanofabrication and processing)

81.16.-c

81.07.Gf (Nanowires) 81.16.Pr (Micro- and nano-oxidation)

王爽, 李悦文, 修向前, 张丽颖, 华雪梅, 谢自力, 陶涛, 刘斌, 陈鹏, 张荣, 郑有炓. Synthesis and characterization of β-Ga₂O₃@GaN nanowires[J]. 中国物理B, 2019, 28(2): 28104-028104.

Shuang Wang(王爽), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Li-Ying Zhang(张丽颖), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Bin Liu(刘斌), Peng Chen(陈鹏), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Synthesis and characterization of β-Ga₂O₃@GaN nanowires[J]. Chin. Phys. B, 2019, 28(2): 28104-028104.

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Synthesis and characterization of β-Ga₂O₃@GaN nanowires

Synthesis and characterization of β-Ga₂O₃@GaN nanowires

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