中国物理B ›› 2014, Vol. 23 ›› Issue (4): 46804-046804.doi: 10.1088/1674-1056/23/4/046804
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
韩乐a b, 王盛凯b, 张雄a, 薛百清b, 吴汪然c, 赵毅c, 刘洪刚b
Han Le (韩乐)a b, Wang Sheng-Kai (王盛凯)b, Zhang Xiong (张雄)a, Xue Bai-Qing (薛百清)b, Wu Wang-Ran (吴汪然)c, Zhao Yi (赵毅)c, Liu Hong-Gang (刘洪刚)b
摘要: We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeOx interfacial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which the Al2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge (100) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (Ion/Ioff) ratio of above 1× 104, a subthreshold slope of ~ 120 mV/dec, and a peak hole mobility of 265 cm2/V· s are achieved.
中图分类号: (Interface structure and roughness)