Effect of ultrathin GeO
x interfacial layer formed by thermal oxidation on Al
2O
3 capped Ge
韩乐, 王盛凯, 张雄, 薛百清, 吴汪然, 赵毅, 刘洪刚
Effect of ultrathin GeO
x interfacial layer formed by thermal oxidation on Al
2O
3 capped Ge
Han Le (韩乐), Wang Sheng-Kai (王盛凯), Zhang Xiong (张雄), Xue Bai-Qing (薛百清), Wu Wang-Ran (吴汪然), Zhao Yi (赵毅), Liu Hong-Gang (刘洪刚)
中国物理B
.
2014, (4): 46804
-046804
.
DOI: 10.1088/1674-1056/23/4/046804