中国物理B ›› 2014, Vol. 23 ›› Issue (2): 20701-020701.doi: 10.1088/1674-1056/23/2/020701

• GENERAL • 上一篇    下一篇

A unified drain current 1/f noise model for GaN-based high electron mobility transistors

刘宇安, 庄奕琪, 马晓华, 杜鸣, 包军林, 李聪   

  1. School of Microelectronics, Xidian University, Xi’an 710071, China
  • 收稿日期:2013-01-14 修回日期:2013-05-13 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076101, 61204092, 61334002, and JJ0500102508).

A unified drain current 1/f noise model for GaN-based high electron mobility transistors

Liu Yu-An (刘宇安), Zhuang Yi-Qi (庄奕琪), Ma Xiao-Hua (马晓华), Du Ming (杜鸣), Bao Jun-Lin (包军林), Li Cong (李聪)   

  1. School of Microelectronics, Xidian University, Xi’an 710071, China
  • Received:2013-01-14 Revised:2013-05-13 Online:2013-12-12 Published:2013-12-12
  • Contact: Zhuang Yi-Qi E-mail:yqzhuang@xidian.edu.cn
  • About author:07.50.Hp; 85.40.Hp; 71.55.Eq
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076101, 61204092, 61334002, and JJ0500102508).

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摘要： In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AlGaN/GaN high electron mobility transistor (HEMT). Based on both mobility fluctuation and carrier number fluctuation in a two-dimensional electron gas (2DEG) channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Δgm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Δgm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the AlGaN/GaN HEMTs.

关键词: 1/f noise, hot carrier, piezoelectric effects, AlGaN/GaN, HEMT

Abstract: In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AlGaN/GaN high electron mobility transistor (HEMT). Based on both mobility fluctuation and carrier number fluctuation in a two-dimensional electron gas (2DEG) channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Δgm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Δgm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the AlGaN/GaN HEMTs.

Key words: 1/f noise, hot carrier, piezoelectric effects, AlGaN/GaN, HEMT

中图分类号:  (Electrical noise and shielding equipment)

  • 07.50.Hp
85.40.Hp (Lithography, masks and pattern transfer) 71.55.Eq (III-V semiconductors)