A unified drain current 1/
f noise model for GaN-based high electron mobility transistors
刘宇安, 庄奕琪, 马晓华, 杜鸣, 包军林, 李聪
A unified drain current 1/
f noise model for GaN-based high electron mobility transistors
Liu Yu-An (刘宇安), Zhuang Yi-Qi (庄奕琪), Ma Xiao-Hua (马晓华), Du Ming (杜鸣), Bao Jun-Lin (包军林), Li Cong (李聪)
中国物理B
.
2014, (2): 20701
-020701
.
DOI: 10.1088/1674-1056/23/2/020701