中国物理B ›› 2013, Vol. 22 ›› Issue (11): 118502-118502.doi: 10.1088/1674-1056/22/11/118502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-voltage SOI lateral MOSFET with a dual vertical field plate

范杰, 张波, 罗小蓉, 李肇基   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2013-05-22 修回日期:2013-07-02 出版日期:2013-09-28 发布日期:2013-09-28
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176069), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062), and Project of 51308020304.

High-voltage SOI lateral MOSFET with a dual vertical field plate

Fan Jie (范杰), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2013-05-22 Revised:2013-07-02 Online:2013-09-28 Published:2013-09-28
  • Contact: Fan Jie E-mail:fan576@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176069), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062), and Project of 51308020304.

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摘要： A new silicon-on-insulator (SOI) power lateral MOSFET with a dual vertical field plate (VFP) in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage (BV) and specific on-resistance (Ron,sp). The mechanism of the VFP is analyzed and the characteristics of BV and Ron,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the Ron,sp decreases from 366 mΩ·cm2 to 110 mΩ·cm2.

关键词: breakdown voltage, specific on-resistance, vertical field plate, oxide trench

Abstract: A new silicon-on-insulator (SOI) power lateral MOSFET with a dual vertical field plate (VFP) in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage (BV) and specific on-resistance (Ron,sp). The mechanism of the VFP is analyzed and the characteristics of BV and Ron,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the Ron,sp decreases from 366 mΩ·cm2 to 110 mΩ·cm2.

Key words: breakdown voltage, specific on-resistance, vertical field plate, oxide trench

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables)