中国物理B ›› 2013, Vol. 22 ›› Issue (10): 106803-106803.doi: 10.1088/1674-1056/22/10/106803
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
卢平元a b, 马紫光b, 宿世臣a, 张力a, 陈弘b, 贾海强b, 江洋b, 钱卫宁a, 王耿a, 卢太平b, 何苗a
Lu Ping-Yuan (卢平元)a b, Ma Zi-Guang (马紫光)b, Su Shi-Chen (宿世臣)a, Zhang Li (张力)a, Chen Hong (陈弘)b, Jia Hai-Qiang (贾海强)b, Jiang Yang (江洋)b, Qian Wei-Ning (钱卫宁)a, Wang Geng (王耿)a, Lu Tai-Ping (卢太平)b, He Miao (何苗)a
摘要: Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.
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