中国物理B ›› 2013, Vol. 22 ›› Issue (10): 106802-106802.doi: 10.1088/1674-1056/22/10/106802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

王波a b, 宿世臣a, 何苗a, 陈弘b, 吴汶波a, 张伟伟a, 王巧a, 陈虞龙a, 高优a, 张力a, 朱克宝a, 雷严a   

  1. a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for NewEnergy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2013-02-05 修回日期:2013-04-15 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science and Technology Innovation Program of Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science and Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

Wang Bo (王波)a b, Su Shi-Chen (宿世臣)a, He Miao (何苗)a, Chen Hong (陈弘)b, Wu Wen-Bo (吴汶波)a, Zhang Wei-Wei (张伟伟)a, Wang Qiao (王巧)a, Chen Yu-Long (陈虞龙)a, Gao You (高优)a, Zhang Li (张力)a, Zhu Ke-Bao (朱克宝)a, Lei Yan (雷严)a   

  1. a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for NewEnergy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2013-02-05 Revised:2013-04-15 Online:2013-08-30 Published:2013-08-30
  • Contact: He Miao, Chen Hong E-mail:herofate@126.com;hchen@aphy.iphy.ac.cn
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science and Technology Innovation Program of Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science and Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).

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摘要： We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

关键词: GaN, light-emitting diode (LED), undercut

Abstract: We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

Key words: GaN, light-emitting diode (LED), undercut

中图分类号:  (Structure of clean surfaces (and surface reconstruction))

  • 68.35.B-
68.55.-a (Thin film structure and morphology) 81.65.Cf (Surface cleaning, etching, patterning) 81.40.Rs (Electrical and magnetic properties related to treatment conditions)