中国物理B ›› 2013, Vol. 22 ›› Issue (10): 106804-106804.doi: 10.1088/1674-1056/22/10/106804

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Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

何久洋a, 张祺桢b, 吴兴龙a, 朱剑豪c   

  1. a Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Department of Physics, Nanjing University, Nanjing 210093, China;
    b Department of Physics, Nanjing Normal University, Nanjing 210046, China;
    c Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
  • 收稿日期:2013-04-18 修回日期:2013-06-13 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CB922102 and 2013CB932901), the National Natural Science Foundation of China (Grant No. 60976063), and the Priority Academic Program Development (PAPD) of Higher Education Institutions of Jiangsu Province and Hong Kong Research Grants Council (RGC) General Research Funds (GRF) (Grant Nos. CityU 112510 and CityU 112212).

Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

He Jiu-Yang (何久洋)a, Zhang Qi-Zhen (张祺桢)b, Wu Xing-Long (吴兴龙)a, Chu Paul K. (朱剑豪)c   

  1. a Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Department of Physics, Nanjing University, Nanjing 210093, China;
    b Department of Physics, Nanjing Normal University, Nanjing 210046, China;
    c Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
  • Received:2013-04-18 Revised:2013-06-13 Online:2013-08-30 Published:2013-08-30
  • Contact: Wu Xing-Long E-mail:hkxlwu@nju.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CB922102 and 2013CB932901), the National Natural Science Foundation of China (Grant No. 60976063), and the Priority Academic Program Development (PAPD) of Higher Education Institutions of Jiangsu Province and Hong Kong Research Grants Council (RGC) General Research Funds (GRF) (Grant Nos. CityU 112510 and CityU 112212).

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摘要： The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.

关键词: β-FeSi2 nanocrystal, photoluminescence, resonant charge transfer

Abstract: The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.

Key words: β-FeSi2 nanocrystal, photoluminescence, resonant charge transfer

中图分类号:  (Quantum dots (patterned in quantum wells))

  • 68.65.Hb
78.55.-m (Photoluminescence, properties and materials)