Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons

doi:10.1088/1674-1056/27/10/108504

中国物理B ›› 2018, Vol. 27 ›› Issue (10): 108504-108504.doi: 10.1088/1674-1056/27/10/108504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons

Hong Zhao(赵虹), Dan-Dan Peng(彭丹丹), Jun He(何军), Xin-Mei Li(李新梅), Meng-Qiu Long(龙孟秋)

1 Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China;
2 Institute of Low-dimensional Quantum Materials and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China

收稿日期:2018-07-01 修回日期:2018-07-24 出版日期:2018-10-05 发布日期:2018-10-05
通讯作者: Jun He, Meng-Qiu Long E-mail:junhe@csu.edu.cn;mqlong@csu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 21673296), the Hunan Provincial Natural Science Foundation of China (Grant No. 2018JJ2481), and the Fundamental Research Funds for the Central Universities of Central South University, China (Grant No. 2018zzts328).

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons

Hong Zhao(赵虹)¹, Dan-Dan Peng(彭丹丹)¹, Jun He(何军)¹, Xin-Mei Li(李新梅)¹, Meng-Qiu Long(龙孟秋)^1,2

1 Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China;
2 Institute of Low-dimensional Quantum Materials and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China

Received:2018-07-01 Revised:2018-07-24 Online:2018-10-05 Published:2018-10-05
Contact: Jun He, Meng-Qiu Long E-mail:junhe@csu.edu.cn;mqlong@csu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 21673296), the Hunan Provincial Natural Science Foundation of China (Grant No. 2018JJ2481), and the Fundamental Research Funds for the Central Universities of Central South University, China (Grant No. 2018zzts328).

摘要/Abstract

摘要：

In this article, the spin-dependent electronic and transport properties of the armchair boron-phosphorous nanoribbons (ABPNRs) are mainly studied by using the non-equilibrium Green function method combined with the spin-polarized density function theory. Our calculated electronic structures indicate that the edge hydrogenated ABPNRs exhibit a ferromagnetic bipolar magnetic semiconductor property, and that the Si atom doping can make ABPNRs convert into up-spin dominated half metal. The spin-resolved transport property results show that the doped devices can realize 100% spin-filtering function, and that the interesting negative differential resistance phenomenon can be observed. Our calculations suggest that the ABPNRs can be constructed as a spin heterojunction by introducing Si doping partially, and it would be used as a spin-diode for nano-spintronics in future.

关键词: armchair boron-phosphorous nanoribbon, Si doping, bipolar magnetic semiconductor property, negative differential resistance

Abstract:

Key words: armchair boron-phosphorous nanoribbon, Si doping, bipolar magnetic semiconductor property, negative differential resistance

中图分类号: (Nanoelectronic devices)

85.35.-p

73.63.-b (Electronic transport in nanoscale materials and structures) 75.75.-c (Magnetic properties of nanostructures) 72.15.Nj (Collective modes (e.g., in one-dimensional conductors))

赵虹, 彭丹丹, 何军, 李新梅, 龙孟秋. Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons[J]. 中国物理B, 2018, 27(10): 108504-108504.

Hong Zhao(赵虹), Dan-Dan Peng(彭丹丹), Jun He(何军), Xin-Mei Li(李新梅), Meng-Qiu Long(龙孟秋). Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons[J]. Chin. Phys. B, 2018, 27(10): 108504-108504.

参考文献 46

[1]	Geim A K and Novoselov K S 2007 Nat. Mater. 6 183 doi: 10.1038/nmat1849
[2]	Jose D and Datta A 2011 Phys. Chem. Chem. Phys. 13 7304 doi: 10.1039/c0cp02580a
[3]	Li L K, Yu Y J, Ye G J, Ge Q Q, Ou X D, Wu H, Feng D L, Chen X H and Zhang Y B 2014 Nat. Nanotechnol. 9 372 doi: 10.1038/nnano.2014.35
[4]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X F, Tomanek D and Ye P D 2014 ACS Nano 8 4033 doi: 10.1021/nn501226z
[5]	Long M Q, Tang L, Wang D, Li Y L and Shuai Z G 2011 ACS Nano 5 2593 doi: 10.1021/nn102472s
[6]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Nat Nanotechnol. 7 699 doi: 10.1038/nnano.2012.193
[7]	Xiao J, Long M Q, Zhang X J, Ouyang J, Xu H and Gao Y L 2015 Sci. Rep. 5 09961 doi: 10.1038/srep09961
[8]	Michetti P and Recher P 2011 Phys. Rev. B 84 125438 doi: 10.1103/PhysRevB.84.125438
[9]	Bi J Y, Han L H, Wang Q, Wu L Y, Quhe R G and Lu P F 2018 Chin. Phys. B 27 026802 doi: 10.1088/1674-1056/27/2/026802
[10]	Deng X Q, Zhang Z H, Tang G P, Fan Z Q and Yang C H 2014 Rsc Adv. 4 58941 doi: 10.1039/C4RA09566A
[11]	Zhao C C, Tan S H, Zhou Y H, Wang R J, Wang X J and Chen K Q 2017 Carbon 113 170 doi: 10.1016/j.carbon.2016.11.022
[12]	Nazirfakhr M and Shahhoseini A 2018 Phys. Lett. A 382 704 doi: 10.1016/j.physleta.2018.01.001
[13]	Zhou Y H, Lei Y and Peng Y L 2015 Aer. Adv. Eng. Res. 21 267
[14]	Jiang B, Zhou Y H, Chen C Y and Chen K Q 2015 Org. Electron. 23 133 doi: 10.1016/j.orgel.2015.04.015
[15]	Husain M M and Kumar M 2015 Org. Electron. 27 92 doi: 10.1016/j.orgel.2015.09.014
[16]	Chen L N, Ma S S, Ouyang F P, Wu X Z, Xiao J and Xu H 2010 Chin. Phys. B 19 097301 doi: 10.1088/1674-1056/19/9/097301
[17]	Zeng B W, Li M J, Zhang X J, Yi Y G, Fu L P and Long M Q 2016 J. Phys. Chem. C 120 25037 doi: 10.1021/acs.jpcc.6b07048
[18]	Sahin H, Cahangirov S, Topsakal M, Bekaroglu E, Akturk E, Senger R T and Ciraci S 2009 Phys. Rev. B 80 155453 doi: 10.1103/PhysRevB.80.155453
[19]	Lopez-Castillo A 2012 Int. J. Quantum Chem. 112 3152 doi: 10.1002/qua.24096
[20]	Wang S F and Wu X J 2015 Chin. J. Chem. Phys. 28 588 doi: 10.1063/1674-0068/28/cjcp1505100
[21]	Wu M H, Zhang Z H and Zeng X C 2010 Appl. Phys. Lett. 97 093109 doi: 10.1063/1.3484957
[22]	Sohbatzadeh Z, Roknabadi M R, Shahtahmasebi N and Behdani M 2015 Physica E 65 61 doi: 10.1016/j.physe.2014.08.003
[23]	Wang Y L and Shi S Q 2010 Solid State Commun. 150 1473 doi: 10.1016/j.ssc.2010.05.031
[24]	Cakir D, Kecik D, Sahin H, Durgun E and Peeters F M 2015 Phys. Chem. Chem. Phys. 17 13013 doi: 10.1039/C5CP00414D
[25]	Yang K W, Li M J, Zhang X J, Li X M, Gao Y L and Long M Q 2017 Chin. Phys. B 26 098509 doi: 10.1088/1674-1056/26/9/098509
[26]	Zhuang H L L and Hennig R G 2012 Appl. Phys. Lett. 101 153109 doi: 10.1063/1.4758465
[27]	Peelaers H and Van de Walle C G 2012 Phys. Rev. B 86 241401 doi: 10.1103/PhysRevB.86.241401
[28]	Dong Y L, Zeng B W, Xiao J, Zhang X J, Li D D, Li M J, He J and Long M Q 2018 J. Phys.:Condens. Matter 30 125302 doi: 10.1088/1361-648X/aaad3b
[29]	Low T, Rodin A S, Carvalho A, Jiang Y J, Wang H, Xia F N and Neto A H C 2014 Phys. Rev. B 90 075434 doi: 10.1103/PhysRevB.90.075434
[30]	Zhang D, Long M, Zhang X, Cui L, Li X and Xu H 2017 J. Appl. Phys. 121 093903 doi: 10.1063/1.4977581
[31]	Zhang D, Long M, Zhang X, Ouyang F, Li M and Xu H 2015 J. Appl. Phys. 117 014311 doi: 10.1063/1.4905503
[32]	Wang G, Long M Q and Zhang D 2017 Chin. Phys. Lett. 34 097303 doi: 10.1088/0256-307X/34/9/097303
[33]	Pan C N, Long M Q and He J 2018 Chin. Phys. B 27 088101 doi: 10.1088/1674-1056/27/8/088101
[34]	Li M, Zhang D, Gao Y, Cao C and Long M 2017 Org. Electron. 44 168 doi: 10.1016/j.orgel.2017.02.018
[35]	Li X B, Cao L M, Long M Q, Liu Z R and Zhou G H 2018 Carbon 131 160 doi: 10.1016/j.carbon.2018.01.079
[36]	Zhang X, Zhang D, Xie F, Zheng X, Wang H and Long M 2017 Phys. Lett. A 381 2097 doi: 10.1016/j.physleta.2017.04.030
[37]	Shirzadi B and Yarmohammadi M 2017 Chin. Phys. B 26 017203 doi: 10.1088/1674-1056/26/1/017203
[38]	Xie F, Fan Z Q, Zhang X J, Liu J P, Wang H Y, Liu K, Yu J H and Long M Q 2017 Org. Electron. 42 21 doi: 10.1016/j.orgel.2016.12.020
[39]	Yu J and Guo W 2015 Appl. Phys. Lett. 106 043107 doi: 10.1063/1.4906998
[40]	Onat B, Hallioglu L, Ipek S and Durgun E 2017 J. Phys. Chem. C 121 4583
[41]	Özçelik V O, Kecik D, Durgun E and Ciraci S 2015 J. Phys. Chem. C 119 845 doi: 10.1021/jp5106554
[42]	Taylor J, Guo H and Wang J 2001 Phys. Rev. B 63 245407 doi: 10.1103/PhysRevB.63.245407
[43]	Baerends E J 2000 Theor. Chem. Acc 103 265 doi: 10.1007/s002140050031
[44]	Boese A D, Doltsinis N L, Handy N C and Sprik M 2000 J. Chem. Phys. 112 1670 doi: 10.1063/1.480732
[45]	Buttiker M, Imry Y, Landauer R and Pinhas S 1985 Phys. Rev. B 31 6207 doi: 10.1103/PhysRevB.31.6207
[46]	Li X X, Wu X J, Li Z Y, Yang J L and Hou J G 2012 Nanoscale 4 5680 doi: 10.1039/c2nr31743e

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 46

相关文章 11

Metrics

本文评价

推荐阅读 0

[1]	Hong Wang(王虹), Zunren Lv(吕尊仁), Shuai Wang(汪帅), Haomiao Wang(王浩淼), Hongyu Chai(柴宏宇), Xiaoguang Yang(杨晓光), Lei Meng(孟磊), Chen Ji(吉晨), and Tao Yang(杨涛). Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB[J]. 中国物理B, 2022, 31(9): 98104-098104.
[2]	Jing-Fen Zhao(赵敬芬), Hui Wang(王辉), Zai-Fa Yang(杨在发), Hui Gao(高慧), Hong-Xia Bu(歩红霞), and Xiao-Juan Yuan(袁晓娟). Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations[J]. 中国物理B, 2022, 31(1): 17302-017302.
[3]	Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华). Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy[J]. 中国物理B, 2021, 30(12): 127301-127301.
[4]	汤方栋, 杜乾衡, Cedomir Petrovic, 张威, 何明全, 张立源. Negative differential resistance and quantum oscillations in FeSb₂ with embedded antimony[J]. 中国物理B, 2019, 28(3): 37104-037104.
[5]	张真真, 符张龙, 郭旭光, 曹俊诚. 4.3 THz quantum-well photodetectors with high detection sensitivity[J]. 中国物理B, 2018, 27(3): 30701-030701.
[6]	冯申艳, 张巧璇, 杨洁, 雷鸣, 屈贺如歌. Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures[J]. 中国物理B, 2017, 26(9): 97401-097401.
[7]	武德起, 丁武昌, 杨姗姗, 贾锐, 金智, 刘新宇. High performance oscillator with 2-mW output power at 300 GHz[J]. 中国物理B, 2014, 23(5): 57204-057204.
[8]	卢平元, 马紫光, 宿世臣, 张力, 陈弘, 贾海强, 江洋, 钱卫宁, 王耿, 卢太平, 何苗. Influence of Si doping on the structural and optical properties of InGaN epilayers[J]. 中国物理B, 2013, 22(10): 106803-106803.
[9]	张伟, 薛军帅, 周晓伟, 张月, 刘子阳, 张进成, 郝跃. Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer[J]. 中国物理B, 2012, 21(7): 77103-077103.
[10]	陈灵娜, 马松山, 欧阳方平, 伍小赞, 肖金, 徐慧. Negative differential resistance behaviour in N-doped crossed graphene nanoribbons[J]. 中国物理B, 2010, 19(9): 97301-097301.
[11]	张晓昕, 曾一平, 王晓光, 王保强, 朱占平. Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes[J]. 中国物理B, 2004, 13(9): 1560-1563.