中国物理B ›› 2021, Vol. 30 ›› Issue (9): 97201-097201.doi: 10.1088/1674-1056/abea87

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Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures

Yao Li(李姚)1,2,3,† and Hong-Bin Pu(蒲红斌)1,3   

  1. 1 Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;
    2 Key Laboratory of Wide Bandgap Semiconductor Materials, Ministry of Education, Xi'an 710071, China;
    3 Xi'an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion, Xi'an 710048, China
  • 收稿日期:2020-11-27 修回日期:2021-01-21 接受日期:2021-03-01 出版日期:2021-08-19 发布日期:2021-08-24
  • 通讯作者: Yao Li E-mail:liyao@xaut.edu.cn
  • 基金资助:
    Project supported by the Xi'an Science and Technology Program, China (Grant No. 2019217814GXRC014CG015-GXYD14.3) and the Open Project of Key Laboratory of Wide Band-gap Semiconductor Materials, Ministry of Education, China (Grant No. Kdxkf2019-01).

Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures

Yao Li(李姚)1,2,3,† and Hong-Bin Pu(蒲红斌)1,3   

  1. 1 Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;
    2 Key Laboratory of Wide Bandgap Semiconductor Materials, Ministry of Education, Xi'an 710071, China;
    3 Xi'an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion, Xi'an 710048, China
  • Received:2020-11-27 Revised:2021-01-21 Accepted:2021-03-01 Online:2021-08-19 Published:2021-08-24
  • Contact: Yao Li E-mail:liyao@xaut.edu.cn
  • Supported by:
    Project supported by the Xi'an Science and Technology Program, China (Grant No. 2019217814GXRC014CG015-GXYD14.3) and the Open Project of Key Laboratory of Wide Band-gap Semiconductor Materials, Ministry of Education, China (Grant No. Kdxkf2019-01).

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摘要： To study the electron transport properties in InGaN channel-based heterostructures, a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier. Various scattering mechanisms, such as dislocation impurity (DIS) scattering, polar optical phonon (POP) scattering, piezoelectric field (PE) scattering, interface roughness (IFR) scattering, deformation potential (DP) scattering, alloy disorder (ADO) scattering from InGaN channel layer, and temperature-dependent energy bandgaps are considered in the calculation model. A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure (DH) to the theoretical AlInGaN/AlN/InGaN single heterostructure (SH) is made and analyzed with a full range of barrier alloy composition. The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al0.4In0.07Ga0.53N barrier. Finally, the temperature-dependent two-dimensional electron gas (2DEG) density and mobility in InGaN channel-based DH with Al0.83In0.13Ga0.04N and Al0.4In0.07Ga0.53N barrier are investigated. Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.

关键词: scattering mechanism, double heterostructures, electron mobility, InGaN channel

Abstract: To study the electron transport properties in InGaN channel-based heterostructures, a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier. Various scattering mechanisms, such as dislocation impurity (DIS) scattering, polar optical phonon (POP) scattering, piezoelectric field (PE) scattering, interface roughness (IFR) scattering, deformation potential (DP) scattering, alloy disorder (ADO) scattering from InGaN channel layer, and temperature-dependent energy bandgaps are considered in the calculation model. A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure (DH) to the theoretical AlInGaN/AlN/InGaN single heterostructure (SH) is made and analyzed with a full range of barrier alloy composition. The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al0.4In0.07Ga0.53N barrier. Finally, the temperature-dependent two-dimensional electron gas (2DEG) density and mobility in InGaN channel-based DH with Al0.83In0.13Ga0.04N and Al0.4In0.07Ga0.53N barrier are investigated. Our results are expected to conduce to the practical application of InGaN channel-based heterostructures.

Key words: scattering mechanism, double heterostructures, electron mobility, InGaN channel

中图分类号:  (Low-field transport and mobility; piezoresistance)

  • 72.20.Fr
72.80.Cw (Elemental semiconductors) 72.20.Dp (General theory, scattering mechanisms)