Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas

doi:10.1088/1674-1056/27/12/127805

中国物理B ›› 2018, Vol. 27 ›› Issue (12): 127805-127805.doi: 10.1088/1674-1056/27/12/127805

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas

Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏)

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

收稿日期:2018-07-04 修回日期:2018-09-16 出版日期:2018-12-05 发布日期:2018-12-05
通讯作者: Hao Jiang E-mail:stsjiang@mail.sysu.edu.cn
基金资助:
Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas

Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏)

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

Received:2018-07-04 Revised:2018-09-16 Online:2018-12-05 Published:2018-12-05
Contact: Hao Jiang E-mail:stsjiang@mail.sysu.edu.cn
Supported by:
Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

摘要/Abstract

摘要：

Indium-composition fluctuations in InGaN epitaxial layers are suppressed by using periodically-pulsed mixture (PPM) of N₂ and H₂ carrier gas. Photoluminescence, optical transmission, reciprocal space map and space-resolved cathodoluminescence are employed to characterize the InGaN epilayers. It is shown that the lateral In-fluctuations mainly occur as hillock-like In-rich regions. Both the number and size of In-rich regions are reduced by introducing the PPM carrier gas. Moreover, the measurements first experimentally demonstrate that the H₂ carrier gas has a stronger decomposition effect on the In-rich region. As the duration time of the PPM carrier gas increases, the reduction of In-content in the In-rich region reaches up to 12%, however, only 2% for the In-homogeneous region. These factors lead to the suppression of In-fluctuations.

关键词: InGaN alloys, suppression of In-fluctuations, periodically-pulsed mixture of nitrogen and hydrogen

Abstract:

Key words: InGaN alloys, suppression of In-fluctuations, periodically-pulsed mixture of nitrogen and hydrogen

中图分类号: (III-V semiconductors)

78.55.Cr

81.05.Ea (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

王海龙, 张晓涵, 王红霞, 黎斌, 陈冲, 李永贤, 颜欢, 吴志盛, 江灏. Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas[J]. 中国物理B, 2018, 27(12): 127805-127805.

Hai-Long Wang(王海龙), Xiao-Han Zhang(张晓涵), Hong-Xia Wang(王红霞), Bin Li(黎斌), Chong Chen(陈冲), Yong-Xian Li(李永贤), Huan Yan(颜欢), Zhi-Sheng Wu(吴志盛), Hao Jiang(江灏). Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas[J]. Chin. Phys. B, 2018, 27(12): 127805-127805.

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Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas

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