中国物理B ›› 2013, Vol. 22 ›› Issue (10): 106803-106803.doi: 10.1088/1674-1056/22/10/106803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Influence of Si doping on the structural and optical properties of InGaN epilayers

卢平元a b, 马紫光b, 宿世臣a, 张力a, 陈弘b, 贾海强b, 江洋b, 钱卫宁a, 王耿a, 卢太平b, 何苗a   

  1. a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b Beijing National Laboratory of Condensed Matter, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2013-01-08 修回日期:2013-04-11 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science & Technology Innovation Program of Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science & Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).

Influence of Si doping on the structural and optical properties of InGaN epilayers

Lu Ping-Yuan (卢平元)a b, Ma Zi-Guang (马紫光)b, Su Shi-Chen (宿世臣)a, Zhang Li (张力)a, Chen Hong (陈弘)b, Jia Hai-Qiang (贾海强)b, Jiang Yang (江洋)b, Qian Wei-Ning (钱卫宁)a, Wang Geng (王耿)a, Lu Tai-Ping (卢太平)b, He Miao (何苗)a   

  1. a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b Beijing National Laboratory of Condensed Matter, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2013-01-08 Revised:2013-04-11 Online:2013-08-30 Published:2013-08-30
  • Contact: Chen Hong, He Miao E-mail:hchen@aphy.iphy.ac.cn;herofate@126.com
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science & Technology Innovation Program of Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science & Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).

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摘要： Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.

关键词: Si doping, InGaN, V-shaped defect

Abstract: Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.

Key words: Si doping, InGaN, V-shaped defect

中图分类号: 

  • 68.55.Jk
68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 78.60.Hk (Cathodoluminescence, ionoluminescence) 78.66.Fd (III-V semiconductors)