Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

doi:10.1088/1674-1056/ab96a2

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 87801-087801.doi: 10.1088/1674-1056/ab96a2

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

Quan-Jiang Lv(吕全江), Yi-Hong Zhang(张一鸿), Chang-Da Zheng(郑畅达), Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Jun-Lin Liu(刘军林)

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

收稿日期:2020-03-07 修回日期:2020-04-07 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Chang-Da Zheng E-mail:zhengchangda@ncu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403105 and 2017YFB0403100) and the National Natural Science Foundation of China (Grant Nos. 11674147, 61604066, 51602141, and 11604137).

Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

Quan-Jiang Lv(吕全江), Yi-Hong Zhang(张一鸿), Chang-Da Zheng(郑畅达), Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Jun-Lin Liu(刘军林)

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

Received:2020-03-07 Revised:2020-04-07 Online:2020-08-05 Published:2020-08-05
Contact: Chang-Da Zheng E-mail:zhengchangda@ncu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403105 and 2017YFB0403100) and the National Natural Science Foundation of China (Grant Nos. 11674147, 61604066, 51602141, and 11604137).

摘要/Abstract

摘要： Inhomogeneous electroluminescence (EL) of InGaN green LEDs grown on mesh-patterned Si (111) substrate had been investigated. Sample with n-AlGaN inserted between the pre-strained layers and the first quantum well showed the inhomogeneous EL in the low current density range. Near-field EL emission intensity distribution images depicted that inhomogeneity in the form of premature turn-on at the periphery of the LED chip, results in stronger emission intensity at the edges. This premature turn-on effect significantly reduces the luminous efficacy and higher ideality factor value due to locally current crowding effect. Raman measurement and fluorescence microscopy results indicated that the partially relaxed in-plane stress at the edge of the window region acts as a parasitic diode with a smaller energy band gap, which is a source of edge emission. Numerical simulations showd that the tilted triangular n-AlGaN functions like a forward-biased Schottky diode, which not only impedes carrier transport, but also contributes a certain ideality factor.

关键词: GaN on silicon, edge emission, n-AlGaN, InGaN green LED

Abstract: Inhomogeneous electroluminescence (EL) of InGaN green LEDs grown on mesh-patterned Si (111) substrate had been investigated. Sample with n-AlGaN inserted between the pre-strained layers and the first quantum well showed the inhomogeneous EL in the low current density range. Near-field EL emission intensity distribution images depicted that inhomogeneity in the form of premature turn-on at the periphery of the LED chip, results in stronger emission intensity at the edges. This premature turn-on effect significantly reduces the luminous efficacy and higher ideality factor value due to locally current crowding effect. Raman measurement and fluorescence microscopy results indicated that the partially relaxed in-plane stress at the edge of the window region acts as a parasitic diode with a smaller energy band gap, which is a source of edge emission. Numerical simulations showd that the tilted triangular n-AlGaN functions like a forward-biased Schottky diode, which not only impedes carrier transport, but also contributes a certain ideality factor.

Key words: GaN on silicon, edge emission, n-AlGaN, InGaN green LED

中图分类号: (Electroluminescence)

78.60.Fi

85.30.-z (Semiconductor devices) 81.05.Ea (III-V semiconductors)

吕全江, 张一鸿, 郑畅达, 高江东, 张建立, 刘军林. Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer[J]. 中国物理B, 2020, 29(8): 87801-087801.

Quan-Jiang Lv(吕全江), Yi-Hong Zhang(张一鸿), Chang-Da Zheng(郑畅达), Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Jun-Lin Liu(刘军林). Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer[J]. Chin. Phys. B, 2020, 29(8): 87801-087801.

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Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

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