中国物理B ›› 2013, Vol. 22 ›› Issue (4): 48501-048501.doi: 10.1088/1674-1056/22/4/048501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Dual-gate lateral double-diffused metal–oxide semiconductor with ultra-low specific on-resistance

范杰, 汪志刚, 张波, 罗小蓉   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2012-04-09 修回日期:2012-09-13 出版日期:2013-03-01 发布日期:2013-03-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176069), the National Key Laboratory of Analog Integrated Circuit, China (Grant No. 9140C090304110C0905), and the Innovation Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. CXJJ201004).

Dual-gate lateral double-diffused metal–oxide semiconductor with ultra-low specific on-resistance

Fan Jie (范杰), Wang Zhi-Gang (汪志刚), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2012-04-09 Revised:2012-09-13 Online:2013-03-01 Published:2013-03-01
  • Contact: Fan Jie E-mail:fan576@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176069), the National Key Laboratory of Analog Integrated Circuit, China (Grant No. 9140C090304110C0905), and the Innovation Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. CXJJ201004).

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摘要： A new high voltage trench lateral double-diffused metal-oxide semiconductor (LDMOS) with ultra-low specific on-resistance (Ron,sp) is proposed. The structure features dual gate (DG LDMOS): a planar gate and a trench gate inset in the oxide trench. Firstly, the dual gate can provide dual conduction channel and reduce Ron,sp dramatically. Secondly, the oxide trench in the drift region modulates the electric field distribution and reduces the cell pitch but still can maintain comparable breakdown voltage (BV). Simulation results show that the cell pitch of the DG LDMOS can be reduced by 50% in comparison with that of conventional LDMOS at the equivalent BV; Furthermore, Ron,sp of the DG LDMOS can be reduced by 67% due to the smaller cell pitch and the dual gate.

关键词: breakdown voltage, specific on-resistance, dual gate, oxide trench

Abstract: A new high voltage trench lateral double-diffused metal-oxide semiconductor (LDMOS) with ultra-low specific on-resistance (Ron,sp) is proposed. The structure features dual gate (DG LDMOS): a planar gate and a trench gate inset in the oxide trench. Firstly, the dual gate can provide dual conduction channel and reduce Ron,sp dramatically. Secondly, the oxide trench in the drift region modulates the electric field distribution and reduces the cell pitch but still can maintain comparable breakdown voltage (BV). Simulation results show that the cell pitch of the DG LDMOS can be reduced by 50% in comparison with that of conventional LDMOS at the equivalent BV; Furthermore, Ron,sp of the DG LDMOS can be reduced by 67% due to the smaller cell pitch and the dual gate.

Key words: breakdown voltage, specific on-resistance, dual gate, oxide trench

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables)