Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

doi:10.1088/1674-1056/21/3/037105

中国物理B ›› 2012, Vol. 21 ›› Issue (3): 37105-037105.doi: 10.1088/1674-1056/21/3/037105

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

黄小辉,刘建平,范亚明,孔俊杰,杨辉,王怀兵

收稿日期:2011-11-26 修回日期:2011-03-15 出版日期:2012-02-15 发布日期:2012-02-15
通讯作者: 王怀兵,hbwang2006@sinano.ac.cn E-mail:hbwang2006@sinano.ac.cn

Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

Huang Xiao-Hui(黄小辉), Liu Jian-Ping(刘建平), Fan Ya-Ming(范亚明), Kong Jun-Jie(孔俊杰), Yang Hui(杨辉), and Wang Huai-Bing(王怀兵)^†

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China

Received:2011-11-26 Revised:2011-03-15 Online:2012-02-15 Published:2012-02-15
Contact: Wang Huai-Bing,hbwang2006@sinano.ac.cn E-mail:hbwang2006@sinano.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61006084 and 61076119) and the Technical Corporation Innovation Foundation of Suzhou Industrial Park, China (Grant No. SG0962).

摘要/Abstract

Abstract: The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tanθ and f is higher than that with a higher production of tanθ and f.

Key words: GaN, Patterned sapphire substrate, light emitting diode

中图分类号: (III-V semiconductors)

71.55.Eq

78.30.Fs (III-V and II-VI semiconductors)

黄小辉,刘建平,范亚明,孔俊杰,杨辉,王怀兵. [J]. 中国物理B, 2012, 21(3): 37105-037105.

Huang Xiao-Hui(黄小辉), Liu Jian-Ping(刘建平), Fan Ya-Ming(范亚明), Kong Jun-Jie(孔俊杰), Yang Hui(杨辉), and Wang Huai-Bing(王怀兵) . Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape[J]. Chin. Phys. B, 2012, 21(3): 37105-037105.

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Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

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