Ohmic contacts of 4H-SiC on ion-implantation layers

doi:10.1088/1674-1056/19/1/017204

中国物理B ›› 2010, Vol. 19 ›› Issue (1): 17204-017204.doi: 10.1088/1674-1056/19/1/017204

Ohmic contacts of 4H-SiC on ion-implantation layers

张岩¹, 王守国², 张义门³, 张玉明³

(1)Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; (2)Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China;School of Information Science and Technology, Northwest University, Xi'an 710127, China; (3)School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2009-04-03 修回日期:2009-05-18 出版日期:2010-01-15 发布日期:2010-01-15

Ohmic contacts of 4H-SiC on ion-implantation layers

Wang Shou-Guo(王守国)^a)c)^†, Zhang Yan(张岩)^a), Zhang Yi-Men(张义门)^b), and Zhang Yu-Ming(张玉明)^b)

^a Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; ^b School of Microelectronics, Xidian University, Xi'an 710071, China;; ^c School of Information Science and Technology, Northwest University, Xi'an 710127, China

Received:2009-04-03 Revised:2009-05-18 Online:2010-01-15 Published:2010-01-15

摘要/Abstract

摘要： The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range R_p are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance R_sh are 30~kΩ /□ and 4.9~kΩ/□ and the values of specific contact resistance ρ_c of ohmic contacts are 7.1× 10^-4Ω.cm² and 9.5× 10^-5Ω.cm² for the implanted layers with implantation performed three and four times respectively.

Abstract: The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range R_p are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance R_sh are 30 kΩ /□ and 4.9 kΩ/□ and the values of specific contact resistance $\rho_{\rm c}$ of ohmic contacts are 7.1× 10^-4Ω$\cdot$cm² and 9.5 × 10^-5Ω $\cdot$ cm² for the implanted layers with implantation performed three and four times respectively.

Key words: silicon carbide, ion implantation, ohmic contact, sheet resistance

中图分类号: (Metal-nonmetal contacts)

73.40.Ns

68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 73.40.Cg (Contact resistance, contact potential) 73.61.Le (Other inorganic semiconductors)

王守国, 张岩, 张义门, 张玉明. Ohmic contacts of 4H-SiC on ion-implantation layers[J]. 中国物理B, 2010, 19(1): 17204-017204.

Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) . Ohmic contacts of 4H-SiC on ion-implantation layers[J]. Chin. Phys. B, 2010, 19(1): 17204-017204.

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Ohmic contacts of 4H-SiC on ion-implantation layers

Ohmic contacts of 4H-SiC on ion-implantation layers

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