Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

doi:10.1088/1674-1056/27/9/097305

中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97305-097305.doi: 10.1088/1674-1056/27/9/097305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

Sheng-Xu Dong(董升旭), Yun Bai(白云), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Cheng-Yue Yang(杨成樾), Xin-Yu Liu(刘新宇)

1 High-Frequency High-Voltage Device and Integrated Circuits R & D Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-02-24 修回日期:2018-06-16 出版日期:2018-09-05 发布日期:2018-09-05
通讯作者: Yun Bai E-mail:baiyun@ime.ac.cn
基金资助:
Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences and the National Key Research and Development Program of China (Grant No. 2016YFB0100601).

Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

Sheng-Xu Dong(董升旭)^1,2, Yun Bai(白云)¹, Yi-Dan Tang(汤益丹)^1,2, Hong Chen(陈宏)^1,2, Xiao-Li Tian(田晓丽)¹, Cheng-Yue Yang(杨成樾)¹, Xin-Yu Liu(刘新宇)¹

1 High-Frequency High-Voltage Device and Integrated Circuits R & D Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-02-24 Revised:2018-06-16 Online:2018-09-05 Published:2018-09-05
Contact: Yun Bai E-mail:baiyun@ime.ac.cn
Supported by:
Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences and the National Key Research and Development Program of China (Grant No. 2016YFB0100601).

摘要/Abstract

摘要：

The electrical characteristics of W/4H-SiC Schottky contacts formed at different annealing temperatures have been measured by using current-voltage-temperatures (I-V-T) and capacitance-voltage-temperatures (C-V-T) techniques in the temperature range of 25 ℃-175 ℃. The testing temperature dependence of the barrier height (BH) and ideality factor (n) indicates the presence of inhomogeneous barrier. Tung's model has been applied to evaluate the degree of inhomogeneity, and it is found that the 400 ℃ annealed sample has the lowest T₀ of 44.6 K among all the Schottky contacts. The barrier height obtained from C-V-T measurement is independent of the testing temperature, which suggests a uniform BH. The x-ray diffraction (XRD) analysis shows that there are two kinds of space groups of W when it is deposited or annealed at lower temperature (≤ 500 ℃). The phase of W₂C appears in the sample annealed at 600 ℃, which results in the low BH and the high T₀. The 500 ℃ annealed sample has the highest BH at all testing temperatures, indicating an optimal annealing temperature for the W/4H-SiC Schottky rectifier for high-temperature application.

关键词: SiC, Schottky contact, inhomogeneity barrier, x-ray diffraction (XRD)

Abstract:

Key words: SiC, Schottky contact, inhomogeneity barrier, x-ray diffraction (XRD)

中图分类号: (Metal-nonmetal contacts)

73.40.Ns

董升旭, 白云, 汤益丹, 陈宏, 田晓丽, 杨成樾, 刘新宇. Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures[J]. 中国物理B, 2018, 27(9): 97305-097305.

Sheng-Xu Dong(董升旭), Yun Bai(白云), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Cheng-Yue Yang(杨成樾), Xin-Yu Liu(刘新宇). Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures[J]. Chin. Phys. B, 2018, 27(9): 97305-097305.

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Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

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