Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes

doi:10.1088/1674-1056/21/3/037304

中国物理B ›› 2012, Vol. 21 ›› Issue (3): 37304-037304.doi: 10.1088/1674-1056/21/3/037304

陈丰平¹,张玉明¹,张义门¹,汤晓燕¹,王悦湖¹,陈文豪²

收稿日期:2011-05-24 修回日期:2011-10-17 出版日期:2012-02-15 发布日期:2012-02-15
通讯作者: 陈丰平,fpchen@yeah.net E-mail:fpchen@yeah.net

Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes

Chen Feng-Ping(陈丰平)^a)†, Zhang Yu-Ming(张玉明)^a), Zhang Yi-Men(张义门)^a), Tang Xiao-Yan(汤晓燕)^a), Wang Yue-Hu(王悦湖)^a), and Chen Wen-Hao(陈文豪)^b)

a. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
b. School of Technical Physics, Xidian University, Xi'an 710071, China

Received:2011-05-24 Revised:2011-10-17 Online:2012-02-15 Published:2012-02-15
Contact: Chen Feng-Ping,fpchen@yeah.net E-mail:fpchen@yeah.net
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61006060), the 13115 Innovation Engineering of Shaanxi, China (Grant No. 2008ZDKG-30), and the Key Laboratory Fund of Ministry of Education, China (Grant No. JY0100112501).

摘要/Abstract

Abstract: The current-voltage characteristics of 4H-SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 ℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.

Key words: 4H-SiC junction barrier Schottky diode, temperature dependence, electrical characteristics

中图分类号: (Metal-nonmetal contacts)

73.40.Ns

73.40.-c (Electronic transport in interface structures) 85.30.Hi (Surface barrier, boundary, and point contact devices) 73.30.+y (Surface double layers, Schottky barriers, and work functions)

陈丰平, 张玉明, 张义门, 汤晓燕, 王悦湖, 陈文豪. [J]. 中国物理B, 2012, 21(3): 37304-037304.

Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) . Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes[J]. Chin. Phys. B, 2012, 21(3): 37304-037304.

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Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes

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