Ohmic contacts of 4H-SiC on ion-implantation layers
王守国, 张岩, 张义门, 张玉明
Ohmic contacts of 4H-SiC on ion-implantation layers
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)
中国物理B . 2010, (1): 17204 -017204 .  DOI: 10.1088/1674-1056/19/1/017204