›› 2014, Vol. 23 ›› Issue (10): 107306-107306.doi: 10.1088/1674-1056/23/10/107306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effects of different dopants on switching behavior of HfO2-based resistive random access memory

邓宁a b, 庞华a b, 吴畏a b   

  1. a Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
    b Innovation Center for MicroNanoelectronics and Integrated System, Beijing 100871, China
  • 收稿日期:2014-07-04 修回日期:2014-08-04 出版日期:2014-10-15 发布日期:2014-10-15
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA010403).

Effects of different dopants on switching behavior of HfO2-based resistive random access memory

Deng Ning (邓宁)a b, Pang Hua (庞华)a b, Wu Wei (吴畏)a b   

  1. a Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
    b Innovation Center for MicroNanoelectronics and Integrated System, Beijing 100871, China
  • Received:2014-07-04 Revised:2014-08-04 Online:2014-10-15 Published:2014-10-15
  • Contact: Deng Ning E-mail:ningdeng@tsinghua.edu.cn
  • About author:73.40.Ns; 85.35.-p; 85.90.+h
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA010403).

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摘要： In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.

关键词: RRAM, conductive filament, doping

Abstract: In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.

Key words: RRAM, conductive filament, doping

中图分类号:  (Metal-nonmetal contacts)

  • 73.40.Ns
85.35.-p (Nanoelectronic devices) 85.90.+h (Other topics in electronic and magnetic devices and microelectronics)