中国物理B ›› 2012, Vol. 21 ›› Issue (10): 107306-107306.doi: 10.1088/1674-1056/21/10/107306
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
马飞, 刘红侠, 樊继斌, 王树龙
Ma Fei (马飞), Liu Hong-Xia (刘红侠), Fan Ji-Bin (樊继斌), Wang Shu-Long (王树龙)
摘要: In this paper the influences of the metal-gate and high-k/SiO2/Si stacked structure on the metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated. The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation. The two-dimensional Poisson's equation of potential distribution is presented. A threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs is developed by solving these Poisson's equations using the boundary conditions. The model is verified by a two-dimensional device simulator, which provides the basic design guidance for metal-gate/high-k/SiO2/Si stacked MOSFETs.
中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))