中国物理B ›› 2011, Vol. 20 ›› Issue (2): 27202-027202.doi: 10.1088/1674-1056/20/2/027202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

张光沉, 冯士维, 周舟, 李静婉, 郭春生   

  1. School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2010-09-06 修回日期:2010-09-20 出版日期:2011-02-15 发布日期:2011-02-15
  • 基金资助:
    Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4092005), the National High Technology Research and Development Program of China (Grant No. 2009AA032704), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091103110006).

Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

Zhang Guang-Chen(张光沉)†, Feng Shi-Wei(冯士维), Zhou Zhou(周舟), Li Jing-Wan(李静婉),and Guo Chun-Sheng(郭春生)   

  1. School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • Received:2010-09-06 Revised:2010-09-20 Online:2011-02-15 Published:2011-02-15
  • Supported by:
    Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4092005), the National High Technology Research and Development Program of China (Grant No. 2009AA032704), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091103110006).

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摘要： The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μ m SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip-level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.

Abstract: The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μ m SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip-level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.

Key words: high electron mobility transistor, self-heating effect, structure function, reliability

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.40.Ns (Metal-nonmetal contacts)