A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

doi:10.1088/1674-1056/20/1/016102

中国物理B ›› 2011, Vol. 20 ›› Issue (1): 16102-016102.doi: 10.1088/1674-1056/20/1/016102

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

何进¹, 刘峰², 周幸叶², 张健², 张立宁²

(1)School of Electronics and Information, Nantong University, Nantong 226019, China;The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China;TSRC, Institut; (2)TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China

收稿日期:2009-12-12 修回日期:2010-02-06 出版日期:2011-01-15 发布日期:2011-01-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60876027), and the Open Funds of Jiangsu Province Key Lab of ASIC Design (JSICK1007).

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

He Jin(何进)^a)b)c)†, Liu Feng(刘峰)^c), Zhou Xing-Ye(周幸叶)^c), Zhang Jian(张健)^c), and Zhang Li-Ning(张立宁)^c)

^a School of Electronics and Information, Nantong University, Nantong 226019, China; ^b The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China; ^c TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China

Received:2009-12-12 Revised:2010-02-06 Online:2011-01-15 Published:2011-01-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60876027), and the Open Funds of Jiangsu Province Key Lab of ASIC Design (JSICK1007).

摘要/Abstract

摘要： A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate (DG) MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.

关键词: MOSFETs, transistors, doping, modeling, double-gate (DG)

Abstract: A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate (DG) MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.

Key words: MOSFETs, transistors, doping, modeling, double-gate (DG)

中图分类号: (Quasicrystals)

61.44.Br

73.40.Ns (Metal-nonmetal contacts) 73.40.Ty (Semiconductor-insulator-semiconductor structures)

何进, 刘峰, 周幸叶, 张健, 张立宁. A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region[J]. 中国物理B, 2011, 20(1): 16102-016102.

He Jin(何进), Liu Feng(刘峰), Zhou Xing-Ye(周幸叶), Zhang Jian(张健), and Zhang Li-Ning(张立宁). A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region[J]. Chin. Phys. B, 2011, 20(1): 16102-016102.

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A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

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