Formation mechanism of incubation layers in the initial  stage of microcrystalline silicon growth by PECVD

doi:10.1088/1009-1963/16/2/045

中国物理B ›› 2007, Vol. 16 ›› Issue (2): 553-557.doi: 10.1088/1009-1963/16/2/045

Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD

侯国付¹, 薛俊明¹, 郭群超¹, 孙建¹, 赵颖¹, 耿新华¹, 李乙钢²

(1)Institute of Photoelectronics, Nankai University, Tianjin 300071, China;Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Tianjin 300071, China;Key Laboratory of Optoelectronic Information Science and Technology, Chinese M; (2)Institute of Physics, Nankai University, Tianjin 300071, China

收稿日期:2005-12-23 修回日期:2006-08-09 出版日期:2007-02-20 发布日期:2007-02-20
基金资助:
Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and 2006CB202603), the Starting Project of Nankai University (Grant No J02033) and the Key Laboratory of Optoelectronic Information Technical Science, Ministry of Education (Grant No 2005-18), and the Key Project of Tianjin Municipal Science and Technology Commission (Grant No 043186511).

Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD

Hou Guo-Fu(侯国付)^a)b)c)^†, Xue Jun-Ming(薛俊明)^a)b)c), Guo Qun-Chao(郭群超)^a)b)c), Sun Jian(孙建)^a)b)c), Zhao Ying(赵颖)^a)b)c), Geng Xin-Hua(耿新华)^a)b)c), and Li Yi-Gang(李乙钢)^d)

^a Institute of Photoelectronics, Nankai University, Tianjin 300071, China^b Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Tianjin 300071, China^c Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministry of Education, Tianjin 300071, China; ^b Institute of Physics, Nankai University, Tianjin 300071, China

Received:2005-12-23 Revised:2006-08-09 Online:2007-02-20 Published:2007-02-20
Supported by:
Project supported by the State Key Development Program for Basic Research of China (Grant Nos 2006CB202602 and 2006CB202603), the Starting Project of Nankai University (Grant No J02033) and the Key Laboratory of Optoelectronic Information Technical Science, Ministry of Education (Grant No 2005-18), and the Key Project of Tianjin Municipal Science and Technology Commission (Grant No 043186511).

摘要/Abstract

摘要： The incubation layers in microcrystalline silicon films (\muc-Si:H) are studied in detail. The incubation layers in \muc-Si:H films are investigated by bifacial Raman spectra, and the results indicate that either decreasing silane concentration (SC) or increasing plasma power can reduce the thickness of incubation layer. The analysis of the in-situ diagnosis by plasma optical emission spectrum (OES) shows that the emission intensities of the SiH*(412\,nm) and H_\al (656nm) lines are time-dependent, thus SiH*/H_\al ratio is of temporal evolution. The variation of SiH*/H_\al ratio can indicate the variation in relative concentration of precursor and atomic hydrogen in the plasma. And the atomic hydrogen plays a crucial role in the formation of \muc-Si:H; thus, with the plasma excited, the temporal-evolution SiH*/H_\al ratio has a great influence on the formation of an incubation layer in the initial growth stage. The fact that decreasing the SC or increasing the plasma power can decrease the SiH*/H_\al ratio is used to explain why the thickness of incubation layer can reduce with decreasing the SC or increasing the plasma power.

关键词: microcrystalline silicon, incubation layer, bifacial Raman measurement, optical emission spectrum (OES)

Abstract: The incubation layers in microcrystalline silicon films ($\mu$c-Si:H) are studied in detail. The incubation layers in $\mu$c-Si:H films are investigated by bifacial Raman spectra, and the results indicate that either decreasing silane concentration (SC) or increasing plasma power can reduce the thickness of incubation layer. The analysis of the in-situ diagnosis by plasma optical emission spectrum (OES) shows that the emission intensities of the SiH*(412 nm) and H$_{\alpha}$ (656nm) lines are time-dependent, thus SiH*/H$_{\alpha}$ ratio is of temporal evolution. The variation of SiH*/H$_{\alpha}$ ratio can indicate the variation in relative concentration of precursor and atomic hydrogen in the plasma. And the atomic hydrogen plays a crucial role in the formation of $\mu$c-Si:H; thus, with the plasma excited, the temporal-evolution SiH*/H$_{\alpha}$ ratio has a great influence on the formation of an incubation layer in the initial growth stage. The fact that decreasing the SC or increasing the plasma power can decrease the SiH*/H$_{\alpha}$ ratio is used to explain why the thickness of incubation layer can reduce with decreasing the SC or increasing the plasma power.

Key words: microcrystalline silicon, incubation layer, bifacial Raman measurement, optical emission spectrum (OES)

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

68.55.A- (Nucleation and growth) 68.55.-a (Thin film structure and morphology) 78.30.Am (Elemental semiconductors and insulators)

侯国付, 薛俊明, 郭群超, 孙建, 赵颖, 耿新华, 李乙钢. Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD[J]. 中国物理B, 2007, 16(2): 553-557.

Hou Guo-Fu(侯国付), Xue Jun-Ming(薛俊明), Guo Qun-Chao(郭群超), Sun Jian(孙建), Zhao Ying(赵颖), Geng Xin-Hua(耿新华), and Li Yi-Gang(李乙钢). Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD[J]. Chinese Physics, 2007, 16(2): 553-557.

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Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD

Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD

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