中国物理B ›› 2006, Vol. 15 ›› Issue (5): 1110-1113.doi: 10.1088/1009-1963/15/5/041

• • 上一篇    下一篇

Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

高艳涛, 张晓丹, 赵颖, 孙健, 朱峰, 魏长春, 陈飞   

  1. Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, China
  • 收稿日期:2005-08-25 修回日期:2006-02-23 出版日期:2006-05-20 发布日期:2006-05-20
  • 基金资助:
    Project supported the Key Project of Tianjin Municipal Science and Technology Commission (Grant No 043186511), the National Natural Science Foundation of China (Grant No 60506003), and the Chinese-Greece International Project.

Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

Gao Yan-Tao (高艳涛), Zhang Xiao-Dan (张晓丹), Zhao Ying (赵颖), Sun Jian (孙健), Zhu Feng (朱峰), Wei Chang-Chun (魏长春), Chen Fei (陈飞)   

  1. Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin 300071, China
  • Received:2005-08-25 Revised:2006-02-23 Online:2006-05-20 Published:2006-05-20
  • Supported by:
    Project supported the Key Project of Tianjin Municipal Science and Technology Commission (Grant No 043186511), the National Natural Science Foundation of China (Grant No 60506003), and the Chinese-Greece International Project.

PDF (PC)

717

赞

摘要： Hydrogenated microcrystalline silicon (\mu c-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (Hk2+SiHk4). Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xkc) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES).

关键词: very high frequency plasma enhanced chemical vapour deposition, intrinsic microcrystalline silicon, gas flow rate

Abstract: Hydrogenated microcrystalline silicon ($\mu$c-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (Hk2+SiHk4). Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xc) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES).

Key words: very high frequency plasma enhanced chemical vapour deposition, intrinsic microcrystalline silicon, gas flow rate

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
68.55.-a (Thin film structure and morphology) 73.50.Pz (Photoconduction and photovoltaic effects) 73.61.Cw (Elemental semiconductors)