Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

doi:10.1088/1674-1056/21/1/015203

中国物理B ›› 2012, Vol. 21 ›› Issue (1): 15203-015203.doi: 10.1088/1674-1056/21/1/015203

Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

张海龙, 刘丰珍, 朱美芳, 刘金龙

Graduate University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2011-07-15 修回日期:2011-07-28 出版日期:2012-01-15 发布日期:2012-01-20
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. G2006CB202601 and 2011CBA00705), the National Natural Science Foundation of China (Grant No. 60806020), and the Knowledge Innovation Project of Chinese Academy of Sciences (Gran

Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

Zhang Hai-Long(张海龙), Liu Feng-Zhen(刘丰珍)^†, Zhu Mei-Fang(朱美芳), and Liu Jin-Long(刘金龙)

Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received:2011-07-15 Revised:2011-07-28 Online:2012-01-15 Published:2012-01-20
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. G2006CB202601 and 2011CBA00705), the National Natural Science Foundation of China (Grant No. 60806020), and the Knowledge Innovation Project of Chinese Academy of Sciences (Gran

摘要/Abstract

摘要： The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated. The plasma ignition condition is modified by varying the ratio of SiH₄ to H₂ (R_H). For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH^* (I_Hα/I_SiH^*) at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling R_H, the higher I_Hα/I_SiH^* values are realized. By optimizing the R_H modulation, a uniform crystallinity along the growth direction and a denser μ c-Si:H film can be obtained. However, an excessively high I_Hα/I_SiH^* may damage the interface properties, which is indicated by capacitance-voltage (C-V) measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.

关键词: plasma enhanced chemical vapour deposition, microcrystalline silicon, ignition condition

Abstract: The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si ($\mu $c-Si:H) thin films are investigated. The plasma ignition condition is modified by varying the ratio of SiH$_{4}$ to H$_{2}$ ($R_{\rm H})$. For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of H$\alpha $ to SiH$^*$ ($I_{\rm H\alpha }$/$I_{\rm SiH^\ast })$ at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling $R_{\rm H}$, the higher $I_{\rm H\alpha }$/$I_{\rm SiH^\ast }$ values are realized. By optimizing the $R_{\rm H}$ modulation, a uniform crystallinity along the growth direction and a denser $\mu $c-Si:H film can be obtained. However, an excessively high $I_{\rm H\alpha }$/$I_{\rm SiH^\ast }$ may damage the interface properties, which is indicated by capacitance--voltage ($C$--$V)$ measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.

Key words: plasma enhanced chemical vapour deposition, microcrystalline silicon, ignition condition

中图分类号: (High-frequency and RF discharges)

52.80.Pi

68.55.-a (Thin film structure and morphology) 68.90.+g (Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures)

张海龙, 刘丰珍, 朱美芳, 刘金龙. Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition[J]. 中国物理B, 2012, 21(1): 15203-015203.

Zhang Hai-Long(张海龙), Liu Feng-Zhen(刘丰珍), Zhu Mei-Fang(朱美芳), and Liu Jin-Long(刘金龙) . Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition[J]. Chin. Phys. B, 2012, 21(1): 15203-015203.

参考文献 15

[1]	Shah A V, Meier J, Vallat-Sauvain E, Wyrsch N, Kroll U, Droz C and Graf U 2003 Solar Energy Materials and Solar Cells 78 469
[2]	Kalache B, Kosarev A I, Vanderhaghen R and Cabarrocas P R 2002 J. Non-Cryst. Solids 299-302 63
[3]	Hrunski D, Grählert W, Beese H, Kilper T, Gordijn A and Appenzeller W 2009 Thin Solid Films 517 4188
[4]	Smets A H M, Matsui T and Kondo M 2008 J. Appl. Phys. 104 034508
[5]	Yan B J, Yue G Z, Xu X X, Yang J and Guha S 2010 Phys. Status Solidi A 207 671
[6]	Gu J H, Zhu M F, Wang L J, Liu F Z, Zhou B Q and Zhou Y Q 2005 J. Appl. Phys. 98 093505
[7]	Liu F Z, Li C W, Zhu M F, Gu J H and Zhou Y Q 2010 Phys. Status Solidi C 7 533
[8]	Hou G F, Han X Y, Geng X H, Zhang X D, Wei C C, Sun J, Chen X L, Zhang J J and Zhao Y 2010 Phys. Status Solidi C 7 1089
[9]	Fantzy U 1998 Plasma Phys. Control. Fusion 40 1035
[10]	Kosku N and Miyazaki S 2006Thin Solid Films 511-512 265
[11]	Nunomura S, Yoshida I and Kondo M 2009 Appl. Phys. Lett. 94 071502
[12]	Smets H M, Matsui T and Kondo M 2008 Appl. Phys. Lett. 92 033506
[13]	Li T W 2010 Studies on Gas Phase Process of Hot Wire Chemical Deposition for High Rate Growth of Microcrystalline Silicon Thin Films (M. S.) (Beijing: Graduate University of the Chinese Academy of Sciences) p. 56
[14]	Jagannathan B, Anderson W A and Coleman J 1997 Solar Energy Materials and Solar Cells 46 289
[15]	Zhang Q F, Zhu M F, Liu F Z and Zhou Y Q 2007 J. Mater. Sci.: Mater. Electron. 18 33

Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

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