Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber

doi:10.1088/1674-1056/19/9/098102

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 98102-098102.doi: 10.1088/1674-1056/19/9/098102

• CROSS DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber

王光红, 张晓丹, 许盛之, 郑新霞, 魏长春, 孙建, 熊绍珍, 耿新华, 赵颖

Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China

收稿日期:2009-11-29 修回日期:2010-01-20 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin of China (Grant No. 08ZCKFGX03500), National Basic Research Program of China (Grant Nos. 2

Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber

Wang Guang-Hong(王光红), Zhang Xiao-Dan(张晓丹)^†, Xu Sheng-Zhi(许盛之), Zheng Xin-Xia(郑新霞), Wei Chang-Chun(魏长春), Sun Jian(孙建), Xiong Shao-Zhen(熊绍珍), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖)

Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China

Received:2009-11-29 Revised:2010-01-20 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin of China (Grant No. 08ZCKFGX03500), National Basic Research Program of China (Grant Nos. 2006CB202602 and 2006CB202603), National Natural Science Foundation of China (Grant No. 60976051), International Cooperation Project between China–Greece Government (Grant Nos. 2006DFA62390 and 2009DFA62580), and Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295).

摘要/Abstract

摘要： This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si:H or μ c-Si:H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.

Abstract: This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si:H or μc-Si:H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.

Key words: phosphorus contamination, single chamber, microcrystalline silicon, solar cells

中图分类号:

8115H

王光红, 张晓丹, 许盛之, 郑新霞, 魏长春, 孙建, 熊绍珍, 耿新华, 赵颖. Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber[J]. 中国物理B, 2010, 19(9): 98102-098102.

Wang Guang-Hong(王光红), Zhang Xiao-Dan(张晓丹), Xu Sheng-Zhi(许盛之), Zheng Xin-Xia(郑新霞), Wei Chang-Chun(魏长春), Sun Jian(孙建), Xiong Shao-Zhen(熊绍珍), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖). Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber[J]. Chin. Phys. B, 2010, 19(9): 98102-098102.

参考文献 14

[1]	Nakajima A, Ichikawa M, Sawada T, Yoshimi M, Fukuda S, Tawada Y, Meguro T, Takata H, Suezaki T, Goto M, Hayashi K and Yamamoto K 2003 3rd World Conference on Photovoltaic Energy Conversion May 12--16, 2003 Osaka, Japan, 6O-B11-04, p1915
[2]	Zhang X D, Zhao Y, Gao Y T, Chen F, Zhu F, Wei C C, Sun J, Geng X H and Xiong S Z 2006 Acta Phys. Sin. 55 6697 (in Chinese)
[3]	Noda M, Nishimiya T, Yamaguchi K, Kawamura K, Sonobe H, Kuroda M, Yamada A, Takatsuka H, Yamauchi Y and Takeuchi Y 2003 3rd World Conference on Photovoltaic Energy Conversion May 12--16, 2003 Osaka, Japan, 5P-D4-34, p1849
[4]	Yamamoto K, Nakajima A, Yoshimi M, Sawada T, Fukuda S, Suezaki T, Ichikawa M, Koi Y, Goto M, Meguro T, Matsuda T, Kondo M, Sasaki T and Tawada Y 2004 Solar Energy 77 939
[5]	Kroll U, Bucher C, Benagli S, Schõnbächler I, Meier J, Shah A, Ballutaud J, Howling A, Hollenstein C, Büchel A and Poppeller M 2004 Thin Solid Films 451 525
[6]	Sun F H, Zhang X D, Wang G H, Xu S Z, Yue Q, Wei C C, Sun J, Geng X H, Xiong S Z and Zhao Y 2009 Acta Phys. Sin. 58 1293 (in Chinese)
[7]	Houben L, Luysberg M, Hapke P, Carius R, Finger F and Wagner H 1998 Philos. Mag. A 77 1447
[8]	Kondo M and Fujibayashi T 2006 J. Appl. Phys. 99 043703
[9]	Zhang X D, Sun F H, Wei C C, Sun J, Zhang D K, Geng X H, Xiong S Z and Zhao Y 2010 Chin. Phys. B 19 (in publishing)
[10]	Platz R, Fischer D, Dubail S and Shah A 1997 Solar Energy Materials and Solar Cells 46 157
[11]	Li Y M, Li L W, Anna Selvan J A, Delahoy A E and Levy R A 2005 Thin Solid Films 483 84
[12]	Wang G H, Zhang X D, Xu S Z, Wei C C, Sun J, Xiong S Z, Geng X H and Zhao Y 2009 Physica Status Solidi (c) 7(3) 1073
[13]	Urs Samuel Graf 2005 Single-chamber Process Development of Microcrystalline Silicon Solar Cells and High-rate Deposited Intrinsic Layers (Ph. D. Thesis) (Switzerland: Universit'e de Neuch^atel)
[14]	Vetterl O 2001 On the Physics of Microcrystalline Silicon Thin Film Solar Cells (Ph. D. Thesis) (Germany: J"ulich) endfootnotesize

Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber

Reduction of the phosphorus contamination for plasma deposition of p–i–n microcrystalline silicon solar cells in a single chamber

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