中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1320-1324.doi: 10.1088/1009-1963/15/6/031

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Effect of substrate temperature and pressure on properties of microcrystalline silicon films

吴志猛1, 雷青松1, 奚建平1, 耿新华2, 赵颖2, 孙建2   

  1. (1)Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; (2)Institute of Optoelectronics, Nankai University, Tianjin 300071, China
  • 收稿日期:2005-08-03 修回日期:2006-01-24 出版日期:2006-06-20 发布日期:2006-06-20

Effect of substrate temperature and pressure on properties of microcrystalline silicon films

Wu Zhi-Meng (吴志猛)a, Lei Qing-Song (雷青松)a, Geng Xin-Hua (耿新华)b, Zhao Ying (赵颖)b, Sun Jian (孙建)b, Xi Jian-Ping (奚建平)a   

  1. a Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; b Institute of Optoelectronics, Nankai University, Tianjin 300071, China
  • Received:2005-08-03 Revised:2006-01-24 Online:2006-06-20 Published:2006-06-20

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摘要： In this paper intrinsic microcrystalline silicon films have been prepared by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) with different substrate temperature and pressure. The film properties were investigated by using Raman spectra, x-ray diffraction, scanning electron microscope (SEM), and optical transmittance measurements, as well as dark conductivity. Raman results indicate that increase of substrate temperature improves the microcrystallinity of the film. The crystallinity is improved when the pressure increases from 50Pa to 80Pa and the structure transits from microcrystalline to amorphous silicon for pressure higher than 80Pa. SEM reveals the effect of substrate temperature and pressure on surface morphology.

关键词: microcrystalline silicon, VHF-PECVD, Raman spectra, SEM

Abstract: In this paper intrinsic microcrystalline silicon films have been prepared by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) with different substrate temperature and pressure. The film properties were investigated by using Raman spectra, x-ray diffraction, scanning electron microscope (SEM), and optical transmittance measurements, as well as dark conductivity. Raman results indicate that increase of substrate temperature improves the microcrystallinity of the film. The crystallinity is improved when the pressure increases from 50Pa to 80Pa and the structure transits from microcrystalline to amorphous silicon for pressure higher than 80Pa. SEM reveals the effect of substrate temperature and pressure on surface morphology.

Key words: microcrystalline silicon, VHF-PECVD, Raman spectra, SEM

中图分类号:  (Elemental semiconductors)

  • 73.61.Cw
62.50.-p (High-pressure effects in solids and liquids) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.30.Am (Elemental semiconductors and insulators) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))