中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1320-1324.doi: 10.1088/1009-1963/15/6/031
吴志猛1, 雷青松1, 奚建平1, 耿新华2, 赵颖2, 孙建2
Wu Zhi-Meng (吴志猛)a, Lei Qing-Song (雷青松)a, Geng Xin-Hua (耿新华)b, Zhao Ying (赵颖)b, Sun Jian (孙建)b, Xi Jian-Ping (奚建平)a
摘要: In this paper intrinsic microcrystalline silicon films have been prepared by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) with different substrate temperature and pressure. The film properties were investigated by using Raman spectra, x-ray diffraction, scanning electron microscope (SEM), and optical transmittance measurements, as well as dark conductivity. Raman results indicate that increase of substrate temperature improves the microcrystallinity of the film. The crystallinity is improved when the pressure increases from 50Pa to 80Pa and the structure transits from microcrystalline to amorphous silicon for pressure higher than 80Pa. SEM reveals the effect of substrate temperature and pressure on surface morphology.
中图分类号: (Elemental semiconductors)